Wide-wavelength range membrane laser array using selectively grown InGaAlAs MQWs on InP-on-insulator

Takuro Fujii*, Tomonari Sato, Koji Takeda, Nikolaos Panteleimon Diamantopoulos, Hidetaka Nishi, Takaaki Kakitsuka, Tai Tsuchizawa, Shinji Matsuo

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have successfully demonstrated selective-area epitaxial growth of InGaAlAs MQWs on thin InP layer on SiO2/Si substrate for developing an eight-channel membrane laser array with a lasing wavelength of 1272.3-1310.5 nm. By optimizing the photoluminescence peak for each laser, 25.8-Gbit/s direct modulations are demonstrated.

Original languageEnglish
Title of host publicationIET Conference Publications
PublisherInstitution of Engineering and Technology
EditionCP765
ISBN (Electronic)9781839530074, 9781839530661, 9781839530883, 9781839530890, 9781839531071, 9781839531088, 9781839531255, 9781839531705, 9781839531859
Publication statusPublished - 2019
Event45th European Conference on Optical Communication, ECOC 2019 - Dublin, Ireland
Duration: 2019 Sept 222019 Sept 26

Publication series

NameIET Conference Publications
NumberCP765
Volume2019

Conference

Conference45th European Conference on Optical Communication, ECOC 2019
Country/TerritoryIreland
CityDublin
Period19/9/2219/9/26

Keywords

  • Direct bonding
  • Membrane laser
  • Selective-area epitaxial growth
  • Silicon photonics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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