X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

Takeo Suga; Teruyasu Mizoguchi; Masahiro Kunisu; Kazuyoshi Tatsumi; Tomoyuki Yamamoto; Isao Tanaka; Toshimori Sekine

doi:10.2320/matertrans.45.2039

X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

Takeo Suga^*, Teruyasu Mizoguchi, Masahiro Kunisu, Kazuyoshi Tatsumi, Tomoyuki Yamamoto, Isao Tanaka, Toshimori Sekine

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al₂O₃ (0001) at 1173 K in N₂ gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN₄ unit similar to the case of α-Si ₃N₄ crystal. Metallic Si component cannot be found in XANES.

Original language	English
Pages (from-to)	2039-2041
Number of pages	3
Journal	Materials Transactions
Volume	45
Issue number	7
DOIs	https://doi.org/10.2320/matertrans.45.2039
Publication status	Published - 2004 Jul
Externally published	Yes

Keywords

Pulsed laser deposition
Silicon nitride
X-ray absorption near edge structure

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.2320/matertrans.45.2039

Cite this

@article{34abd7e9abc4474b9bea5e2b509cca73,

title = "X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition",

abstract = "Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al2O3 (0001) at 1173 K in N2 gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN4 unit similar to the case of α-Si 3N4 crystal. Metallic Si component cannot be found in XANES.",

keywords = "Pulsed laser deposition, Silicon nitride, X-ray absorption near edge structure",

author = "Takeo Suga and Teruyasu Mizoguchi and Masahiro Kunisu and Kazuyoshi Tatsumi and Tomoyuki Yamamoto and Isao Tanaka and Toshimori Sekine",

year = "2004",

month = jul,

doi = "10.2320/matertrans.45.2039",

language = "English",

volume = "45",

pages = "2039--2041",

journal = "Materials Transactions",

issn = "1345-9678",

publisher = "Japan Institute of Metals (JIM)",

number = "7",

}

TY - JOUR

T1 - X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

AU - Suga, Takeo

AU - Mizoguchi, Teruyasu

AU - Kunisu, Masahiro

AU - Tatsumi, Kazuyoshi

AU - Yamamoto, Tomoyuki

AU - Tanaka, Isao

AU - Sekine, Toshimori

PY - 2004/7

Y1 - 2004/7

N2 - Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al2O3 (0001) at 1173 K in N2 gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN4 unit similar to the case of α-Si 3N4 crystal. Metallic Si component cannot be found in XANES.

AB - Silicon nitride thin film was fabricated by pulsed laser deposition using KrF excimer laser and a silicon nitride compact as a target. The deposition was carried out on Al2O3 (0001) at 1173 K in N2 gas pressure of 0.27Pa. The X-ray diffraction did not provide any structural information of the deposited thin films except that it is composed of amorphous and/or micro-crystalline structure. X-ray absorption near edge structures at Si-K edge revealed that local arrangement of Si is not random. It should be composed of SiN4 unit similar to the case of α-Si 3N4 crystal. Metallic Si component cannot be found in XANES.

KW - Pulsed laser deposition

KW - Silicon nitride

KW - X-ray absorption near edge structure

UR - http://www.scopus.com/inward/record.url?scp=4544336829&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4544336829&partnerID=8YFLogxK

U2 - 10.2320/matertrans.45.2039

DO - 10.2320/matertrans.45.2039

M3 - Article

AN - SCOPUS:4544336829

SN - 1345-9678

VL - 45

SP - 2039

EP - 2041

JO - Materials Transactions

JF - Materials Transactions

IS - 7

ER -

X-ray absorption near edge structures of silicon nitride thin film by pulsed laser deposition

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this