X-ray diffraction profiles of Si nanowires with trapezoidal cross-sections

Teruaki Takeuchi*, Kosuke Tatsumura, Iwao Ohdomari, Takayoshi Shimura, Masao Nagase

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Comparisons of the experimental and calculated X-ray diffraction profiles have been made for Si nanowires with trapezoidal cross-sections. Examined samples are periodically arranged nanowires prepared on a silicon-on-insulator wafer by electron-beam lithography, so that they are isolated from Si substrate. The nanowire periodicity gives rise to diffractions at additional reciprocal lattice points, which we employ to avoid the mixture of the diffraction from the Si substrate. The experimental diffraction profiles are found to be in good agreement with the square modulus of the Fourier transform of the trapezoidal cross-sections determined from transmission electron micrographs.

Original languageEnglish
Pages (from-to)2559-2564
Number of pages6
JournalPhysica B: Condensed Matter
Issue number13
Publication statusPublished - 2011 Jul 1


  • Fourier transform
  • Si nanowire
  • Trapezoidal cross-section
  • X-ray diffraction

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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