Abstract
Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.
| Original language | English |
|---|---|
| Pages (from-to) | L1606-L1608 |
| Journal | Japanese journal of applied physics |
| Volume | 34 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1995 Dec |
| Externally published | Yes |
Keywords
- Hydrogen termination
- Low-temperature oxidation
- Ozone
- Si (111)
- Silicon oxidation
- Silicon oxide
- Suboxide
- XPS
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)