XPS analysis of ultrathin SiO2 film growth on Si by ozone

S. Ichimura*, K. Koike, A. Kurokawa, K. Nakamura, H. Itoh

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

11 Citations (Scopus)


We investigated the initial oxidation of Si(100) with ozone by comparison with oxidation by oxygen molecules using a specially fabricated ozone generator that could supply concentrated (typically 30 at.%) ozone gas at 1 atm pressure. We measured the thickness of the SiO2 film on the Si by XPS, using a thermal oxide film with a known thickness as a reference. We observed the growth of an SiO2 film on Si by ozone even at a sample temperature of 200 °C, verifying the strong oxidation power of ozone. The SiO2 film was approximately 2.3 nm thick for 100 min of exposure. The kinetics of oxidation with ozone showed a power law dependence relative to exposure time, with almost the same power value for the ozone gas at 1 atm as at 2000 Pa. However, the growth of the SiO2 film was saturated at the level of one monolayer when the ozone gas was supplied at 10-4 Pa, which suggests to us a rapid decrease of the sticking (or reaction) probability of ozone on monolayer SiO2.

Original languageEnglish
Pages (from-to)497-501
Number of pages5
JournalSurface and Interface Analysis
Issue number1
Publication statusPublished - 2000 Aug
Externally publishedYes
Event8th European Conference on Applications of Surface and Interface Analisys, ECASIA 99 - Sevilla, Spain
Duration: 1999 Oct 41999 Oct 8

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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