Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima*, Kazuo Sakai, Shigeyuki Akiba, Takaya Yamamoto

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)


Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

Original languageEnglish
Pages (from-to)466-468
Number of pages3
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 1979
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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