Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

Yuichi Matsushima; Kazuo Sakai; Shigeyuki Akiba; Takaya Yamamoto

doi:10.1063/1.91171

Zn-diffused In_0.53Ga_0.47As/InP avalanche photodetector

Yuichi Matsushima^*, Kazuo Sakai, Shigeyuki Akiba, Takaya Yamamoto

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

40 Citations (Scopus)

Abstract

Mesa In_0.53Ga_0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

Original language	English
Pages (from-to)	466-468
Number of pages	3
Journal	Applied Physics Letters
Volume	35
Issue number	6
DOIs	https://doi.org/10.1063/1.91171
Publication status	Published - 1979
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.91171

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title = "Zn-diffused In0.53Ga0.47As/InP avalanche photodetector",

abstract = "Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.",

author = "Yuichi Matsushima and Kazuo Sakai and Shigeyuki Akiba and Takaya Yamamoto",

year = "1979",

doi = "10.1063/1.91171",

language = "English",

volume = "35",

pages = "466--468",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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T1 - Zn-diffused In0.53Ga0.47As/InP avalanche photodetector

AU - Matsushima, Yuichi

AU - Sakai, Kazuo

AU - Akiba, Shigeyuki

AU - Yamamoto, Takaya

PY - 1979

Y1 - 1979

N2 - Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

AB - Mesa In0.53Ga0.47As avalanche photodetectors were successfully fabricated by liquid-phase-epitaxial growth on (100) -InP substrate and Zn-diffusion technique. An avalanche multiplication M as high as 32 was measured under broad-area illumination provided by a cw InGaAsP laser at 1.3 μm. Distribution of M was measured by an electron-beam-induced current image of a scanning electron microscope, and uniform multiplication profiles were observed up to M=3 and M=12 at the mesa diameter of 300 and 150 μm, respectively.

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

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Zn-diffused In_0.53Ga_0.47As/InP avalanche photodetector

Abstract

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