ZnSe-ZnTe strained layer superlattice on InP substrate by molecular beam epitaxy

A ZnSe-ZnTe strained layer superlattice (SLS) was grown by molecular beam epitaxy with a 7% lattice mismatch between the components of SLS. InP was used as a substrate material and there was a mismatch of only 3.5% between the components of the SLS and InP. ZnSe was expanded and ZnTe was compressed. Thus the strain was accommodated by the SLS structure and a high-quality superlattice was prepared. Reflective high-energy electron diffraction and X-ray measurements indicated that a high-quality SLS was successfully grown. The superlattice structure was also confirmed by photoluminescence (PL) measurements. Moreover, an interesting phenomenon was observed from the temperature dependence of PL intensity. Strong luminescence was obtained only at a temperature of around 60 K from several samples.