ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices

Makoto Konagai*, Masakazu Kobayashi, Ryuhei Kimura, Kiyoshi Takahashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X1014cm-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X1013cm-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.

Original languageEnglish
Pages (from-to)290-295
Number of pages6
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1988 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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