ZnSe-ZnTe strained-layer superlattices: A novel material for the future optoelectronic devices

ZnSe-ZnTe strained superlines (SLSs) were grown by molecular beam epitaxy 9MBE). Th optical properties of the ZnSe-ZnTe SLS were evaluated by photoluminescence (PL). The PL peak position was shifted by tailoring the structure of the superlattice. The luminescence color in the visible changed from blue-green to red. In order to obtain both p- and n-type conduction in wide-bandgap II-VI compound semiconductors, we have prepared ZnSe-ZnTe superlines with a modulation doping technique. When Sb was selectively doped in ZnTe layers, all the samples exhibited p-type conductivity with hole concentrations of (0.5-1.0)X10¹⁴cm^-3. On the other hand, Ga-doped SLSs were type with electron concentrations of (2-7)X10¹³cm^-3. Furthermore, the growth of ZnSe-ZnS SLS was also demostrated by metalorganic molecular beam epitaxy (MOMBE). Blue luminescence related. to the quantized levels in the SLS was detected.