TY - JOUR
T1 - ZnSe/GaAs heterovalent interfaces
T2 - interface microstructure versus electrical properties
AU - Qiu, J.
AU - Menke, D. R.
AU - Kobayashi, M.
AU - Gunshor, R. L.
AU - Qian, Q. D.
AU - Li, D.
AU - Otsuka, N.
N1 - Funding Information:
The authors are grateful to L.A. Kolodziej ski for her extensive involvement in the Purdue work involving ZnSe/GaAs interfaces. The authors would like to express their thanks to J.H. Weaver for providing the curve fitting software for the XPS data analysis. The authors are indebted to W.N. Delgass and his co-workers for fruitful discussions about the XPS technique. The authors would also like to acknowledge the contributions to this work by D.A. Lubeiski and S.M. Durbin. This work was supported by the Air Force Office of Scientific Research (AFOSR-89-0438) and the Defense Advanced Research Projects Agency/ Office of Naval Research University Research Initiative Program (218-25015).
PY - 1991/5/2
Y1 - 1991/5/2
N2 - Epitaxial ZnSe/epitaxial GaAs interfaces are formed by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. The GaAs surface stoichiometry is systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer is made As deficient. The ZnSe/GaAs interfaces exhibiting low interface state densities are associated with the presence of an interfacial layer of zincblende Ga2Se3. In situ X-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at the interfacial layer. The character of Se 3d core level features from the interfacial region and from separately grown Ga2Se3 epilayers support the identification of the interfacial layer as Ga2Se3.
AB - Epitaxial ZnSe/epitaxial GaAs interfaces are formed by molecular beam epitaxy and evaluated by several techniques including capacitance-voltage (C-V) measurements. The GaAs surface stoichiometry is systematically varied prior to the nucleation of ZnSe. A dramatic reduction of interface state density occurred when the GaAs epilayer is made As deficient. The ZnSe/GaAs interfaces exhibiting low interface state densities are associated with the presence of an interfacial layer of zincblende Ga2Se3. In situ X-ray photoelectron spectroscopy (XPS) is used to study the nature of the bonding at the interfacial layer. The character of Se 3d core level features from the interfacial region and from separately grown Ga2Se3 epilayers support the identification of the interfacial layer as Ga2Se3.
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U2 - 10.1016/0022-0248(91)91074-K
DO - 10.1016/0022-0248(91)91074-K
M3 - Article
AN - SCOPUS:0026413294
SN - 0022-0248
VL - 111
SP - 747
EP - 751
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-4
ER -