ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu*, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed.

Original languageEnglish
Pages (from-to)435-438
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-9
Publication statusPublished - 2016 Jul 1


  • ZnTe
  • heteroepitaxy
  • molecular beam epitaxy
  • sapphire

ASJC Scopus subject areas

  • Condensed Matter Physics


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