小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2023

• 164 Article
• 18 Conference article
• 11 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• 2023

  Surface Morphology and Electronic Properties of SnTe Films Prepared by Molecular Beam Epitaxy

  Su, N., Tsuboi, K., Kobayashi, S., Sugimoto, K. & Kobayashi, M., 2023 4月, In: Physica Status Solidi (A) Applications and Materials Science. 220, 8, 2200555.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Electronic properties 99%
  • Molecular Beam Epitaxy 92%
  • Surface morphology 72%
  • molecular beam epitaxy 54%
• 2022

  Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates

  Kobayashi, S. & Kobayashi, M., 2022, (Accepted/In press) In: Journal of Electronic Materials.

  研究成果: Article › 査読

  • Film growth 100%
  • Sapphire 84%
  • Nucleation 66%
  • Thin films 59%
  • Migration-Enhanced Epitaxy 55%
  1 被引用数 (Scopus)

• Crystal quality improvement of ZnTe (1 1 0) thin film prepared on sapphire by increasing nuclei density on substrate surface

  Kobayashi, S., Sugimoto, K., Tsuboi, K. & Kobayashi, M., 2022 10月 15, In: Journal of Crystal Growth. 596, 126825.

  研究成果: Article › 査読

  • Migration-Enhanced Epitaxy 100%
  • Molecular Beam Epitaxy 65%
  • Sapphire 60%
  • Crystals 45%
  • Thin films 43%
  1 被引用数 (Scopus)

• Molecular beam epitaxy of stoichiometric tin–telluride thin films

  Tsuboi, K., Su, N., Kobayashi, S., Sugimoto, K. & Kobayashi, M., 2022 11月 1, In: Journal of Crystal Growth. 597, 126805.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Molecular beams 86%
  • Molecular Beam 77%
  • Thin films 60%
  1 被引用数 (Scopus)
• 2020

  Structural Change in Ag₂Te Buffer Layer During Two-Step Closed Space Sublimation of AgGaTe₂

  Yu, Y. & Kobayashi, M., 2020 12月, In: Journal of Electronic Materials. 49, 12, p. 7541-7546 6 p.

  研究成果: Article › 査読

  • Buffer layers 100%
  • Sublimation 99%
  • sublimation 77%
  • Annealing 69%
  • buffers 59%
• 2019

  Pursuit of single domain ZnTe layers on sapphire substrates

  Kobayashi, M., 2019 4月 15, In: Journal of Crystal Growth. 512, p. 189-193 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • sapphire 63%
  • Substrates 52%
  • Nucleation 24%
  • Surface 23%
  3 被引用数 (Scopus)

• The Growth of CuGaTe₂ Thin Films by Two-Step Closed Space Sublimation

  Uruno, A. & Kobayashi, M., 2019 8月, In: Physica Status Solidi (A) Applications and Materials Science. 216, 15, 1800883.

  研究成果: Article › 査読

  • Sublimation 100%
  • sublimation 78%
  • Thin films 66%
  • Quartz 62%
  • Surface Free Energy 54%
  2 被引用数 (Scopus)

• The Optical Property Characterization of AgGaTe₂ Prepared by the Two-Step Closed Space Sublimation

  Uruno, A. & Kobayashi, M., 2019 1月 9, In: Physica Status Solidi (A) Applications and Materials Science. 216, 1, 1800592.

  研究成果: Article › 査読

  • Excitons 100%
  • Photoluminescence 92%
  • Sublimation 80%
  • Optical properties 70%
  • sublimation 62%
  1 被引用数 (Scopus)
• 2018

  Formation of AgGaTe₂ films from (Ag₂Te+Ga₂Te₃)/Ag₂Te or Ga₂Te₃/Ag₂Te bilayer structures

  Uruno, A. & Kobayashi, M., 2018 11月 1, In: AIP Advances. 8, 11, 115023.

  研究成果: Article › 査読

  Open Access

  • sublimation 100%
  • preparation 66%
  • boats 60%
  • controllability 53%
  • vapors 34%

• The Crystal Quality and Surface Wettability of Various Tellurium-Based Chalcopyrite Layers Grown by the Closed Space Sublimation

  Uruno, A., Sakurakawa, Y. & Kobayashi, M., 2018 10月 1, In: Journal of Electronic Materials. 47, 10, p. 5730-5734 5 p.

  研究成果: Article › 査読

  • Tellurium 100%
  • Sublimation Method 93%
  • Sublimation 85%
  • Chalcopyrite 75%
  • tellurium 70%
  1 被引用数 (Scopus)
• 2017

  Comparison of Ag(In,Ga)Se₂/Mo and Cu(In,Ga)Se₂/Mo Interfaces in Solar Cells

  Zhang, X., Kobayashi, M. & Yamada, A., 2017 5月 17, In: ACS Applied Materials and Interfaces. 9, 19, p. 16215-16220 6 p.

  研究成果: Article › 査読

  • Schottky Contact 100%
  • Ohmic contacts 93%
  • X-Ray Emission Spectrometry 79%
  • Schematic diagrams 70%
  • Structural properties 66%
  35 被引用数 (Scopus)

• Defect density reduction in core layer of ZnTe electro-optical waveguide by low lattice mismatched interfaces

  Sun, W. C., Nakusu, T., Odaka, K., Kobayashi, M. & Asahi, T., 2017 7月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 4, 04F104.

  研究成果: Article › 査読

  • Optical waveguides 100%
  • Defect density 96%
  • Cladding 88%
  • Waveguides 68%
  • optical waveguides 66%

• Effect of Sodium on the Properties of Ag(In, Ga)Se₂ Thin Films and Solar Cells

  Zhang, X. & Kobayashi, M., 2017 9月, In: IEEE Journal of Photovoltaics. 7, 5, p. 1426-1432 7 p., 7997696.

  研究成果: Article › 査読

  • Solar cells 100%
  • Sodium 97%
  • Thin films 89%
  • sodium 84%
  • Solar Cell 81%
  2 被引用数 (Scopus)

• Effect of Zn and Te beam intensity upon the film quality of ZnTe layers on severely lattice mismatched sapphire substrates by molecular beam epitaxy

  Nakasu, T., Sun, W., Kobayashi, M. & Asahi, T., 2017 6月 15, In: Journal of Crystal Growth. 468, p. 635-637 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Sapphire 86%
  • Optical properties 80%
  • Crystallinity 78%
  7 被引用数 (Scopus)

• Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure

  Nakasu, T., Sun, W. C., Kobayashi, M. & Asahi, T., 2017 4月 1, In: Journal of Electronic Materials. 46, 4, p. 2248-2253 6 p.

  研究成果: Article › 査読

  • Crystal orientation 100%
  • Sapphire 96%
  • Crystal Orientation 91%
  • sapphire 61%
  • Substrates 50%
  7 被引用数 (Scopus)

• High-temperature fabrication of Ag(In,Ga)Se₂ thin films for applications in solar cells

  Zhang, X., Yamada, A. & Kobayashi, M., 2017 10月, In: Physica Status Solidi (A) Applications and Materials Science. 214, 10, 1700042.

  研究成果: Article › 査読

  • Solar cells 100%
  • Thin films 89%
  • Solar Cell 81%
  • Annealing 74%
  • solar cells 69%
  5 被引用数 (Scopus)

• Nucleation of Cu₂Te layer by a closed space sublimation method toward the growth of Te based chalcopyrite

  Sakurakawa, Y., Uruno, A. & Kobayashi, M., 2017 7月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 4, 04F106.

  研究成果: Article › 査読

  • Sublimation Method 100%
  • Sublimation 91%
  • Chalcopyrite 81%
  • sublimation 71%
  • Nucleation 67%
  4 被引用数 (Scopus)

• Structural and electric properties of AgGaTe₂ layers prepared using mixed source of Ag₂Te and Ga₂Te₃

  Uruno, A. & Kobayashi, M., 2017 1月 1, In: Physica Status Solidi (A) Applications and Materials Science. 214, 1, 1600284.

  研究成果: Article › 査読

  • Molar ratio 100%
  • Structural properties 90%
  • Electric properties 88%
  • Buffer layers 79%
  • Electrical Property 70%
  6 被引用数 (Scopus)

• Study on Growth Process of Ag(In, Ga)Se2 Films by a Three-Stage Co-Evaporation Method Using Molecular Beam Epitaxy Apparatus

  Zhang, X. & Kobayashi, M., 2017 4月, In: IEEE Photonics Journal. 9, 2, 7858727.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Evaporation 64%
  • molecular beam epitaxy 54%
  • evaporation 49%
  • Silver 49%
  3 被引用数 (Scopus)

• Surface modification of a-plane sapphire substrates and its effect on crystal orientation of ZnTe layer

  Nakasu, T., Sun, W. C. & Kobayashi, M., 2017 1月, In: Japanese journal of applied physics. 56, 1, 015505.

  研究成果: Article › 査読

  • Crystal orientation 100%
  • Sapphire 96%
  • Surface treatment 75%
  • sapphire 61%
  • Substrates 50%
  2 被引用数 (Scopus)
• 2016

  Crystallographic and optical characterizations of Ag(Ga,Al)Te₂ layers grown on c -plane sapphire substrates by closed space sublimation

  Uruno, A., Takeda, Y., Inoue, T. & Kobayashi, M., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 413-416 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • characterization 50%
  • diffraction 36%
  • x rays 20%
  11 被引用数 (Scopus)

• Epitaxial Relationship Analysis Between ZnTe Epilayers and Sapphire Substrates

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M. & Asahi, T., 2016 10月 1, In: Journal of Electronic Materials. 45, 10, p. 4742-4746 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • zinc tellurides 82%
  • Sapphire 78%
  • Zinc 63%
  • sapphire 49%
  4 被引用数 (Scopus)

• High-Quality AgGaTe₂ Layers on Si Substrates with Ag₂Te Buffer Layers

  Uruno, A. & Kobayashi, M., 2016 9月 1, In: Journal of Electronic Materials. 45, 9, p. 4692-4696 5 p.

  研究成果: Article › 査読

  • Buffer layers 100%
  • Etching 63%
  • Solar Cell 60%
  • buffers 59%
  • Sublimation Method 54%
  7 被引用数 (Scopus)

• Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

  Kazami, F., Sun, W. C., Taguri, K., Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Kobayashi, M. & Asahi, T., 2016 4月 1, In: Physica Status Solidi (B) Basic Research. 253, 4, p. 635-639 5 p.

  研究成果: Article › 査読

  • Lattice mismatch 100%
  • Optical waveguides 82%
  • Surface morphology 62%
  • Waveguides 57%
  • optical waveguides 55%
  5 被引用数 (Scopus)

• Propagation loss reduction of ZnMgTe/ZnTe waveguide devices

  Sun, W. C., Kazami, F., Wang, J., Nakasu, T., Hattori, S., Kizu, T., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016 8月, In: Japanese journal of applied physics. 55, 8, 082201.

  研究成果: Article › 査読

  • Waveguides 100%
  • waveguides 65%
  • propagation 57%
  • Electrooptical effects 37%
  • Crystals 27%
  2 被引用数 (Scopus)

• Selective growth of ZnTe on sapphire substrates using a SiO₂ mask

  Nakasu, T., Hattori, S., Sun, W. C. & Kobayashi, M., 2016 11月 1, In: Physica Status Solidi (B) Basic Research. 253, 11, p. 2265-2269 5 p.

  研究成果: Article › 査読

  • Sapphire 100%
  • Masks 71%
  • masks 63%
  • sapphire 63%
  • Terahertz wave detectors 58%

• Surface Texture and Crystallinity Variation of ZnTe Epilayers Grown on the Step-Terrace Structure of the Sapphire Substrate

  Nakasu, T., Kizu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W. C., Taguri, K., Kazami, F., Hashimoto, Y., Ozaki, S., Kobayashi, M. & Asahi, T., 2016 4月 1, In: Journal of Electronic Materials. 45, 4, p. 2127-2132 6 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • Crystallinity 71%
  • crystallinity 52%
  • sapphire 49%
  9 被引用数 (Scopus)

• Two-step-index ZnMgTe/ZnTe Waveguide Structures with Improved Crystal Quality

  Sun, W. C., Kazami, F., Wang, J., Nakasu, T., Hattori, S., Kizu, T., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016, In: MRS Advances. 1, 23, p. 1721-1727 7 p.

  研究成果: Article › 査読

  • Cladding 100%
  • Waveguides 78%
  • Crystals 75%
  • Lattice mismatch 68%
  • waveguides 51%

• ZnTe layers on R - and S -plane sapphire substrates

  Nakasu, T., Hattori, S., Kizu, T., Sun, W. C., Kazami, F., Hashimoto, Y., Kobayashi, M. & Asahi, T., 2016 7月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 13, 7-9, p. 435-438 4 p.

  研究成果: Article › 査読

  • sapphire 100%
  • crystals 38%
  • poles 34%
  • molecular beam epitaxy 33%
  • excitons 30%
  2 被引用数 (Scopus)
• 2015

  Control of domain orientation during the MBE growth of ZnTe on a-plane sapphire

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Sun, W., Taguri, K., Kazami, F., Kobayashi, M. & Asahi, T., 2015 7月 28, In: Journal of Crystal Growth. 425, p. 191-194 4 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Buffer layers 91%
  • Sapphire 86%
  • molecular beam epitaxy 54%
  14 被引用数 (Scopus)

• Crystallographic Characterization of AgGaTe₂, AgAlTe₂, and Ag(Ga,Al)Te₂ Grown by Closed-Space Sublimation

  Uruno, A., Usui, A., Inoue, T., Takeda, Y. & Kobayashi, M., 2015 9月 26, In: Journal of Electronic Materials. 44, 9, p. 3013-3017 5 p.

  研究成果: Article › 査読

  • Sublimation 100%
  • sublimation 78%
  • Diffraction 76%
  • Sapphire 70%
  • X rays 48%
  7 被引用数 (Scopus)

• Growth of ZnTe epilayers on r- and n-plane sapphire substrates

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F. & Kobayashi, M., 2015 7月 1, In: Japanese journal of applied physics. 54, 7, 075501.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • sapphire 49%
  • Substrates 41%
  • Molecular beam epitaxy 15%
  12 被引用数 (Scopus)

• The growth of AgGaTe₂ layers on glass substrates with Ag₂Te buffer layer by closed space sublimation method

  Uruno, A., Usui, A., Takeda, Y., Inoue, T. & Kobayashi, M., 2015 6月 1, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 12, 6, p. 508-511 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • buffers 76%
  • glass 52%
  • insertion 11%
  • x ray diffraction 9%
  3 被引用数 (Scopus)
• 2014

  (211)-oriented domain formation during growth of ZnTe on m-plane sapphire by MBE

  Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2014 4月, In: Journal of Electronic Materials. 43, 4, p. 921-925 5 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Sapphire 86%
  • poles 56%
  • Poles 55%
  • Epilayers 54%
  10 被引用数 (Scopus)

• Crystal orientation mechanism of ZnTe epilayers formed on different orientations of sapphire substrates by molecular beam epitaxy

  Nakasu, T., Yamashita, S., Aiba, T., Hattori, S., Sun, W., Taguri, K., Kazami, F. & Kobayashi, M., 2014 10月 28, In: Journal of Applied Physics. 116, 16, 163518.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • sapphire 99%
  • crystals 57%
  • thin films 13%
  • optical paths 9%
  15 被引用数 (Scopus)

• Growth and electro-optical characterization of ZnMgTe/ZnTe waveguide by molecular beam epitaxy

  Sun, W., Nakasu, T., Taguri, K., Aiba, T., Yamashita, S., Kobayashi, M., Togo, H. & Asahi, T., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1252-1255 4 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • waveguides 78%
  • characterization 65%
  • thin films 15%
  • crystals 14%
  11 被引用数 (Scopus)

• Growth of AgGaTe₂ and AgAlTe₂ layers for novel photovoltaic materials

  Uruno, A., Usui, A. & Kobayashi, M., 2014 8月, In: Journal of Electronic Materials. 43, 8, p. 2874-2878 5 p.

  研究成果: Article › 査読

  • Diffraction 100%
  • X rays 63%
  • Sapphire 61%
  • Sublimation 53%
  • Solar Cell 40%
  6 被引用数 (Scopus)

• Growth of AgGaTe₂ on a- and c-plane sapphire by closed-space sublimation and analysis of the orientation by pole figure measurement

  Uruno, A., Usui, A. & Kobayashi, M., 2014 1月, In: Japanese journal of applied physics. 53, 1, 015501.

  研究成果: Article › 査読

  • Sublimation 100%
  • Sapphire 94%
  • sublimation 78%
  • poles 62%
  • Poles 61%
  6 被引用数 (Scopus)

• Growth of CuGaTe₂ based compounds by a closed space sublimation method

  Usui, A., Uruno, A. & Kobayashi, M., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1190-1193 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • diffraction 24%
  • x rays 20%
  • stoichiometry 14%
  • crystallinity 13%
  5 被引用数 (Scopus)

• MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

  Nakasu, T., Sun, W. C., Yamashita, S., Aiba, T., Taguri, K., Kobayashi, M., Asahi, T. & Togo, H., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1182-1185 4 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • sapphire 99%
  • characterization 65%
  • crystal lattices 29%
  • poles 25%
  9 被引用数 (Scopus)

• Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

  Nakasu, T., Kobayashi, M., Asahi, T. & Togo, H., 2014 1月, In: Japanese journal of applied physics. 53, 1, 015502.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Sapphire 78%
  • Buffer layers 62%
  • poles 51%
  17 被引用数 (Scopus)

• Structural and optical properties of AgAlTe₂ layers grown on sapphire substrates by closed space sublimation method

  Uruno, A., Usui, A. & Kobayashi, M., 2014 11月 14, In: Journal of Applied Physics. 116, 18, 183504.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • optical properties 58%
  • diffraction 13%
  • x rays 11%
  11 被引用数 (Scopus)

• Structural characterization of AgGaTe₂ layers grown on a- and c-sapphire substrates by a closed space sublimation method

  Uruno, A., Usui, A. & Kobayashi, M., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1186-1189 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • characterization 50%
  • poles 39%
  • diffraction 12%
  3 被引用数 (Scopus)
• 2013

  (211) oriented ZnTe growth on m-plane sapphire by MBE

  Nakasu, T., Kobayashi, M., Togo, H. & Asahi, T., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1381-1384 4 p.

  研究成果: Article › 査読

  • sapphire 100%
  • electro-optical effect 34%
  • poles 20%
  • molecular beam epitaxy 20%
  • detectors 13%
  9 被引用数 (Scopus)

• Deposition of AgGaTe₂ on sapphire substrates by closed space sublimation

  Uruno, A., Usui, A. & Kobayashi, M., 2013 11月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 10, 11, p. 1389-1392 4 p.

  研究成果: Article › 査読

  • sublimation 100%
  • sapphire 76%
  • temperature 26%
  • stoichiometry 21%
  • poles 19%
  3 被引用数 (Scopus)

• Growth of AgGaTe₂ layers by a closed-space sublimation method

  Uruno, A. & Kobayashi, M., 2013 5月, In: Journal of Electronic Materials. 42, 5, p. 859-862 4 p.

  研究成果: Article › 査読

  • Sublimation Method 100%
  • Sublimation 91%
  • sublimation 71%
  • Diffraction 34%
  • Liquid Film 31%
  19 被引用数 (Scopus)
• 2012

  Growth of ZnMgTe/ZnTe waveguide structures and analysis of the light polarization with the electric field

  Kumagai, Y. & Kobayashi, M., 2012 2月, In: Japanese journal of applied physics. 51, 2 PART 2, 02BH06.

  研究成果: Article › 査読

  • Light polarization 100%
  • Waveguides 68%
  • Electric fields 61%
  • Molecular beam epitaxy 52%
  • electro-optical effect 49%
  20 被引用数 (Scopus)

• Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

  Nakasu, T., Kumagai, Y., Nishimura, K., Kobayashi, M., Togo, H. & Asahi, T., 2012 9月 1, In: Applied Physics Express. 5, 9, 095502.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Buffer layers 83%
  • Sapphire 78%
  • molecular beam epitaxy 49%
  24 被引用数 (Scopus)

• X-ray pole figure analysis of ZnTe layers grown on lattice mismatched substrates

  Kobayashi, M., Kumagai, Y., Baba, T. & Imada, S., 2012 8月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 8-9, p. 1748-1751 4 p.

  研究成果: Article › 査読

  • poles 100%
  • x rays 51%
  • electro-optical effect 23%
  • costs 12%
  • symmetry 9%
  18 被引用数 (Scopus)
• 2011

  Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

  Kumagai, Y., Imada, S., Baba, T. & Kobayashi, M., 2011 5月 15, In: Journal of Crystal Growth. 323, 1, p. 132-134 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Waveguides 65%
  • Crystals 64%
  • Lattice mismatch 57%
  21 被引用数 (Scopus)