小林 正和

研究成果

年別の研究成果 1983 1990 1991 1992 1993 2014 2016 2017 2023

• 164 Article
• 18 Conference article
• 11 Conference contribution
• 7 Paper
• 2 その他
  • 1 Letter
  • 1 Review article

年別の研究成果

年別の研究成果

検索結果

• Article

  Growth of ZnMgTe/ZnTe waveguide structures and analysis of the light polarization with the electric field

  Kumagai, Y. & Kobayashi, M., 2012 2月, In: Japanese journal of applied physics. 51, 2 PART 2, 02BH06.

  研究成果: Article › 査読

  • Light polarization 100%
  • Waveguides 68%
  • Electric fields 61%
  • Molecular beam epitaxy 52%
  • electro-optical effect 49%
  20 被引用数 (Scopus)

• Growth of ZnMgTe/ZnTe waveguide structures on ZnTe (0 0 1) substrates by molecular beam epitaxy

  Kumagai, Y., Imada, S., Baba, T. & Kobayashi, M., 2011 5月 15, In: Journal of Crystal Growth. 323, 1, p. 132-134 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Waveguides 65%
  • Crystals 64%
  • Lattice mismatch 57%
  21 被引用数 (Scopus)

• Growth of ZnTe epilayers on r- and n-plane sapphire substrates

  Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Sun, W. C., Taguri, K., Kazami, F. & Kobayashi, M., 2015 7月 1, In: Japanese journal of applied physics. 54, 7, 075501.

  研究成果: Article › 査読

  • Epilayers 100%
  • Sapphire 78%
  • sapphire 49%
  • Substrates 41%
  • Molecular beam epitaxy 15%
  12 被引用数 (Scopus)

• Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source

  Han, J., Stavrinides, T. S., Kobayashi, M., Gunshor, R. L., Hagerott, M. M. & Nurmikko, A. V., 1993, In: Applied Physics Letters. 62, 8, p. 840-842 3 p.

  研究成果: Article › 査読

  • nitrogen plasma 100%
  • molecular beam epitaxy 67%
  • electric contacts 23%
  • light emitting diodes 21%
  • semiconductor lasers 20%
  30 被引用数 (Scopus)

• Helium gas mixing in nitrogen plasma for the control of the acceptor concentration in p-ZnSe

  Kobayashi, M., Tosaka, H., Nagatake, T., Yoshida, T. & Yoshikawa, A., 1994 4月 2, In: Journal of Crystal Growth. 138, 1-4, p. 745-749 5 p.

  研究成果: Article › 査読

  • Nitrogen plasma 100%
  • Zinc Selenide 98%
  • nitrogen plasma 68%
  • Helium 61%
  • helium 42%

• Hexagon formation in photorefractive crystals as mirrorless coherent oscillation

  Uesu, Y., Ueno, A., Kobayashi, M. & Odoulov, S., 1998 7月, In: Journal of the Optical Society of America B: Optical Physics. 15, 7, p. 2065-2069 5 p.

  研究成果: Article › 査読

  • Photorefractive Crystal 100%
  • hexagons 61%
  • Hexagon 52%
  • Four-wave Mixing 46%
  • Oscillation 38%

• High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers

  Kudlek, G., Presser, N., Gutowski, J., Durbin, S., Menke, D., Kobayashi, M. & Gunshor, R. L., 1990 4月 1, In: Journal of Crystal Growth. 101, 1-4, p. 667-672 6 p.

  研究成果: Article › 査読

  • Exciton Luminescence 100%
  • Zinc Selenide 97%
  • Excitons 95%
  • Epilayers 91%
  • Bound Exciton 90%

• High-Quality AgGaTe₂ Layers on Si Substrates with Ag₂Te Buffer Layers

  Uruno, A. & Kobayashi, M., 2016 9月 1, In: Journal of Electronic Materials. 45, 9, p. 4692-4696 5 p.

  研究成果: Article › 査読

  • Buffer layers 100%
  • Etching 63%
  • Solar Cell 60%
  • buffers 59%
  • Sublimation Method 54%
  7 被引用数 (Scopus)

• High-resolution X-ray diffraction analysis of cubic GaN grown on (0 0 1)GaAs by RF-radical source molecular beam epitaxy

  Qin, Z. X., Nagano, H., Sugure, Y., Jia, A. W., Kobayashi, M., Kato, Y., Yoshikawa, A. & Takahashi, K., 1998 6月 15, In: Journal of Crystal Growth. 189-190, p. 425-429 5 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • X ray diffraction analysis 81%
  • X rays 58%
  • molecular beam epitaxy 54%
  7 被引用数 (Scopus)

• High-temperature fabrication of Ag(In,Ga)Se₂ thin films for applications in solar cells

  Zhang, X., Yamada, A. & Kobayashi, M., 2017 10月, In: Physica Status Solidi (A) Applications and Materials Science. 214, 10, 1700042.

  研究成果: Article › 査読

  • Solar cells 100%
  • Thin films 89%
  • Solar Cell 81%
  • Annealing 74%
  • solar cells 69%
  5 被引用数 (Scopus)

• High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region

  Presser, N., Kudlek, G., Gutowski, J., Durbin, S. M., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990, In: Physica Status Solidi (B): Basic Research. 159, 1, p. 443-448 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • Spectroscopy 62%
  • Photoluminescence Spectroscopy 30%
  • spectroscopy 29%

• Hot-exciton luminescence in ZnTe/MnTe quantum wells

  Pelekanos, N., Ding, J., Fu, Q., Nurmikko, A. V., Durbin, S. M., Kobayashi, M. & Gunshor, R. L., 1991, In: Physical Review B. 43, 11, p. 9354-9357 4 p.

  研究成果: Article › 査読

  • excitons 100%
  • quantum wells 98%
  • luminescence 96%
  • phonons 43%
  • augmentation 38%
  10 被引用数 (Scopus)

• Identification of the Human Bronchial Tissues by the Spectroscopic Image Analysis

  Samejima, S. & Kobayashi, M., 2004 1月, In: IEEJ Transactions on Electronics, Information and Systems. 124, 9, p. 1738-1743 6 p.

  研究成果: Article › 査読

  • Image analysis 100%
  • Ultraviolet lasers 92%
  • Tissue 88%
  • Semiconductor lasers 64%
  • Light sources 56%

• IIIB-5 Blue and Blue/Green Laser Diodes and LED-Based Display Devices

  Jeon, H., Hagerott, M., Ding, J., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M., Gunshor, R. L., Hua, G. C. & Otsuka, N., 1992 11月, In: IEEE Transactions on Electron Devices. 39, 11, p. 2652-2653 2 p.

  研究成果: Article › 査読

• II-VI/III-V heterointerfaces: Epilayer-on-epilayer structures

  Qian, Q. D., Qiu, J., Glenn, J. L., O, S., Gunshor, R. L., Kolodziejski, L. A., Kobayashi, M., Otsuka, N., Melloch, M. R., Cooper, J. A., Haggerott, M., Heyen, T. & Nurmikko, A. V., 1989 2月 2, In: Journal of Crystal Growth. 95, 1-4, p. 567-571 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • phytotrons 54%
  • Epitaxial growth 52%
  • Heterojunctions 48%

• II-VI/III-V heterostructures: Epilayer-on-epilayer structures

  Gunshor, R. L., Kolodziejski, L. A., Kobayashi, M., Otsuka, N. & Nurmikko, A. V., 1989 3月 15, In: Proceedings of SPIE - The International Society for Optical Engineering. 1037, p. 78-85 8 p.

  研究成果: Article › 査読

  • Heterostructures 100%
  • Epilayers 99%
  • Gallium Arsenide 84%
  • Molecular Beam Epitaxy 83%
  • Heterojunctions 75%

• Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters

  Hagerott, M., Jeon, H., Nurmikko, A. V., Xie, W., Grillo, D. C., Kobayashi, M. & Gunshor, R. L., 1992, In: Applied Physics Letters. 60, 23, p. 2825-2827 3 p.

  研究成果: Article › 査読

  • electrode materials 100%
  • indium oxides 84%
  • tin oxides 82%
  • emitters 71%
  • light emitting diodes 68%
  26 被引用数 (Scopus)

• Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures

  Qiu, J., Qian, Q. D., Gunshor, R. L., Kobayashi, M., Menke, D. R., Li, D. & Otsuka, N., 1990, In: Applied Physics Letters. 56, 13, p. 1272-1274 3 p.

  研究成果: Article › 査読

  • stoichiometry 100%
  • molecular beams 26%
  • electrical measurement 25%
  • capacitance 20%
  • nucleation 19%
  4 被引用数 (Scopus)

• Influence of the lattice mismatch strain on the surface morphology of ZnMgTe/ZnTe/ZnMgTe electro-optical waveguide structure

  Kazami, F., Sun, W. C., Taguri, K., Nakasu, T., Aiba, T., Yamashita, S., Hattori, S., Kizu, T., Kobayashi, M. & Asahi, T., 2016 4月 1, In: Physica Status Solidi (B) Basic Research. 253, 4, p. 635-639 5 p.

  研究成果: Article › 査読

  • Lattice mismatch 100%
  • Optical waveguides 82%
  • Surface morphology 62%
  • Waveguides 57%
  • optical waveguides 55%
  5 被引用数 (Scopus)

• In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method

  Tokita, S., Kobayashi, M. & Yoshikawa, A., 1994 3月 1, In: Journal of Crystal Growth. 136, 1-4, p. 376-380 5 p.

  研究成果: Article › 査読

  • Metalorganic Molecular Beam Epitaxy 100%
  • Zinc Selenide 89%
  • Molecular beam epitaxy 77%
  • Gas supply 46%
  • molecular beam epitaxy 42%
  1 被引用数 (Scopus)

• Interdiffusion in ZnSe-ZnTe strained-layer superlattices

  Imai, A., Kobayashi, M., Dosho, S., Kongai, M. & Takahashi, K., 1988, In: Journal of Applied Physics. 64, 2, p. 647-650 4 p.

  研究成果: Article › 査読

  • superlattices 100%
  • annealing 47%
  • temperature 23%
  • x ray diffraction 22%
  • molecular beam epitaxy 22%

• Lattice strain and lattice dynamics of ZnSe-ZnTe strained-layer superlattices

  Kobayashi, M., Konagai, M., Takahashi, K. & Urabe, K., 1987, In: Journal of Applied Physics. 61, 3, p. 1015-1022 8 p.

  研究成果: Article › 査読

  • superlattices 100%
  • Raman spectra 20%
  • frequency shift 12%
  • crystallinity 11%
  • electron diffraction 11%
  3 被引用数 (Scopus)

• Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers

  Kudlek, G., Hollandt, J., Presser, N., Gutowski, J., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1990, In: Superlattices and Microstructures. 8, 4, p. 381-385 5 p.

  研究成果: Article › 査読

  • Optical bistability 100%
  • Optical Bistability 94%
  • Zinc Selenide 86%
  • Epilayers 81%
  • Molecular beam epitaxy 74%

• Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface

  Qian, Q. D., Qiu, J., Melloch, M. R., Cooper, J. A., Kolodziejski, L. A., Kobayashi, M. & Gunshor, R. L., 1989, In: Applied Physics Letters. 54, 14, p. 1359-1361 3 p.

  研究成果: Article › 査読

  • capacitance 100%
  • capacitors 81%
  • electric potential 67%
  • depletion 54%
  • electrical measurement 30%
  2 被引用数 (Scopus)

• Low temperature treatment of the (001) ZnTe substrate surface with the assist of atomic hydrogen

  Tsutsumi, K., Terakado, H., Enami, M. & Kobayashi, M., 2003, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21, 4, p. 1959-1962 4 p.

  研究成果: Article › 査読

  • Hydrogen 100%
  • Substrates 88%
  • Nucleation 87%
  • hydrogen 77%
  • nucleation 62%
  11 被引用数 (Scopus)

• Luminescence properties of CdS quantum dots on ZnSe

  Kobayashi, M., 1999, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17, 5, p. 2005-2008 4 p.

  研究成果: Article › 査読

  Open Access

  • Zinc Selenide 100%
  • Photoluminescence 90%
  • Luminescence 81%
  • Buffer layers 59%
  • quantum dots 42%
  4 被引用数 (Scopus)

• MBE growth and characterization of ZnS_1-xTe_x and Zn_1-yMg_yS_1-xTe_x alloys

  Kobayashi, M., Setiagung, C., Wakao, K., Nakamura, S., Yoshikawa, A. & Takahashi, K., 1998, In: Journal of Crystal Growth. 184-185, p. 66-69 4 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Ohmic contacts 97%
  • Zinc Selenide 58%
  • Characterization (materials science) 56%
  • Epilayers 54%
  5 被引用数 (Scopus)

• MBE growth and characterization of ZnTe epilayers on m-plane sapphire substrates

  Nakasu, T., Sun, W. C., Yamashita, S., Aiba, T., Taguri, K., Kobayashi, M., Asahi, T. & Togo, H., 2014 7月, In: Physica Status Solidi (C) Current Topics in Solid State Physics. 11, 7-8, p. 1182-1185 4 p.

  研究成果: Article › 査読

  • molecular beam epitaxy 100%
  • sapphire 99%
  • characterization 65%
  • crystal lattices 29%
  • poles 25%
  9 被引用数 (Scopus)

• MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers

  Grillo, D. C., Xie, W., Kobayashi, M., Gunshor, R. L., Hua, G. C., Otsuka, N., Jeon, H., Ding, J. & Nurmikko, A. V., 1993 5月, In: Journal of Electronic Materials. 22, 5, p. 441-444 4 p.

  研究成果: Article › 査読

  • Semiconductor quantum wells 100%
  • Molecular beam epitaxy 99%
  • Semiconductor lasers 79%
  • Light emitting diodes 63%
  • Injection lasers 58%
  1 被引用数 (Scopus)

• MBE growth of device-Quality cubic GaN on atomically flat (001) GaAs prepared by atomic-Hydrogen treatment at high-Temperatures

  Yoshikawa, A., Qin, Z., Nagano, H., Sugure, Y., Jia, A., Kobayashi, M., Kato, Y. & Takahashi, K., 1998, In: Materials Science Forum. 264-268, PART 2, p. 1221-1224 4 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Cubic Space Group 48%
  • Hydrogen 46%
  • Hexagonal Space Group 46%

• MBE growth of widegap II-VI injection lasers and LEDs

  Kobayashi, M., Gunshor, R. L., Nurmikko, A. V. & Otsuka, N., 1992 6月 1, In: Optoelectronics Tokyo. 7, 1, p. 1-10 10 p.

  研究成果: Article › 査読

  • Injection lasers 100%
  • Molecular beam epitaxy 85%
  • Light emitting diodes 54%
  • Luminescent devices 34%
  • Zinc Selenide 33%

• MBE of wide bandgap II-VI compounds

  Gunshor, R. L., Kobayashi, M., Kolodziejski, L. A., Otsuka, N. & Nurmikko, A. V., 1990 1月, In: Journal of Crystal Growth. 99, 1-4, p. 390-398 9 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Heterojunctions 76%
  • zincblende 73%
  • Energy gap 66%
  4 被引用数 (Scopus)

• Modulation-doped ZnSe:Mn dc thin-film electroluminescent devices

  Kobayashi, M., Mino, N., Inuzuka, H., Konagai, M. & Takahashi, K., 1985, In: Journal of Applied Physics. 57, 10, p. 4706-4710 5 p.

  研究成果: Article › 査読

  • modulation 100%
  • cells 81%
  • thin films 77%
  • ITO (semiconductors) 62%
  • threshold voltage 57%

• Molecular beam epitaxy growth and pole figure analysis of ZnTe epilayer on m-plane sapphire

  Nakasu, T., Kobayashi, M., Asahi, T. & Togo, H., 2014 1月, In: Japanese journal of applied physics. 53, 1, 015502.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Sapphire 78%
  • Buffer layers 62%
  • poles 51%
  17 被引用数 (Scopus)

• Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

  Nakasu, T., Kumagai, Y., Nishimura, K., Kobayashi, M., Togo, H. & Asahi, T., 2012 9月 1, In: Applied Physics Express. 5, 9, 095502.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Buffer layers 83%
  • Sapphire 78%
  • molecular beam epitaxy 49%
  24 被引用数 (Scopus)

• Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

  Kobayashi, M., Nakamura, S., Wakao, K., Yoshikawa, A. & Takahashi, K., 1998, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16, 3, p. 1316-1320 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Molecular beam epitaxy 86%
  • Linewidth 69%
  • Thin films 52%
  • molecular beam epitaxy 47%
  4 被引用数 (Scopus)

• Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb

  Mathine, D. L., Durbin, S. M., Gunshor, R. L., Kobayashi, M., Menke, D. R., Gonsalves, J., Otsuka, N., Fu, Q., Hagerott, M. & Nurmikko, A. V., 1990 4月 1, In: Surface Science. 228, 1-3, p. 344-346 3 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Molecular Beam Epitaxy 84%
  • Heterojunctions 76%
  • II-VI semiconductors 63%
  1 被引用数 (Scopus)

• Molecular beam epitaxy of stoichiometric tin–telluride thin films

  Tsuboi, K., Su, N., Kobayashi, S., Sugimoto, K. & Kobayashi, M., 2022 11月 1, In: Journal of Crystal Growth. 597, 126805.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Molecular Beam Epitaxy 92%
  • Molecular beams 86%
  • Molecular Beam 77%
  • Thin films 60%
  2 被引用数 (Scopus)

• Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 2R, p. 731-735 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photons 65%
  • Doping (additives) 61%
  • thermal energy 57%
  • Thermal energy 54%

• Nitrogen doping of znse and zncdse with the assistance of thermal energy and photon energy

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 8 R, p. 731-735 5 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Photoluminescence 67%
  • Photons 65%
  • Doping (additives) 61%
  • thermal energy 57%

• Nonlinear transmission of MBE-grown ZnSe epilayers in the near-band-edge region

  Presser, N., Kudlek, G., Gutowski, J., Menke, D. R., Kobayashi, M. & Gunshor, R. L., 1991, In: Superlattices and Microstructures. 10, 2, p. 247-252 6 p.

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Epilayers 94%
  • Molecular beam epitaxy 86%
  • Molecular Beam 66%
  • Exciton 56%

• Nucleation of Cu₂Te layer by a closed space sublimation method toward the growth of Te based chalcopyrite

  Sakurakawa, Y., Uruno, A. & Kobayashi, M., 2017 7月 1, In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 35, 4, 04F106.

  研究成果: Article › 査読

  • Sublimation Method 100%
  • Sublimation 91%
  • Chalcopyrite 81%
  • sublimation 71%
  • Nucleation 67%
  4 被引用数 (Scopus)

• Numerical Analysis of Thermal Plasma Flow in a Pipe

  Kobayashi, M., Honda, T. & Kanzawa, A., 1983 1月, In: kagaku kogaku ronbunshu. 9, 6, p. 622-627 6 p.

  研究成果: Article › 査読

  • Plasma flow 100%
  • Thermal Plasma 88%
  • Nusselt Number 55%
  • Numerical analysis 53%
  • Velocity 52%

• NUMERICAL ANALYSIS OF THERMAL PLASMA FLOW IN A PIPE.

  Kobayashi, M., Honda, T. & Kanzawa, A., 1985 4月 1, In: International chemical engineering. 25, 2, p. 308-314 7 p.

  研究成果: Article › 査読

  • Plasma flow 100%
  • Numerical analysis 53%
  • Pipe 46%
  • Hot Temperature 29%
  • Pipe flow 18%

• Observation of a new in-situ optical monitoring signal with monolayer resolution in metalorganic molecular beam epitaxy and metalorganic vapor phase epitaxy of wide-gap II-VI compounds

  Yoshikawa, A., Kobayashi, M. & Tokita, S., 1994 12月 2, In: Journal of Crystal Growth. 145, 1-4, p. 68-73 6 p.

  研究成果: Article › 査読

  • Metalorganic Molecular Beam Epitaxy 100%
  • Metallorganic vapor phase epitaxy 87%
  • Metallorganic Chemical Vapour Deposition 80%
  • Molecular beam epitaxy 77%
  • Monolayers 65%
  1 被引用数 (Scopus)

• Optical properties and device prospects of ZnSe-based quantum structures

  Nurmikko, A. V., Gunshor, R. L. & Kobayashi, M., 1992 2月 2, In: Journal of Crystal Growth. 117, 1-4, p. 432-440 9 p.

  研究成果: Article › 査読

  • Optically pumped lasers 100%
  • Zinc Selenide 78%
  • Excitons 76%
  • Semiconductor quantum wells 68%
  • Optical devices 55%
  1 被引用数 (Scopus)

• Origin of the tilt of crystalline axis influenced by the N-beam incidence direction in rf-MBE of cubic GaN epilayer on (001) GaAs

  Hayashi, H., Hayashida, A., Jia, A. W., Kobayashi, M., Shimotomai, M., Kato, Y., Yoshikawa, A. & Takahashi, K., 1999 11月, In: Physica Status Solidi (B) Basic Research. 216, 1, p. 241-245 5 p.

  研究成果: Article › 査読

  • Epilayers 100%
  • Molecular beam epitaxy 90%
  • Crystalline materials 61%
  • Cubic Space Group 48%
  • incidence 47%

• Phase instability of n-CdS grown by molecular-beam epitaxy

  Yamada, T., Setiagung, C., Jia, A. W., Kobayashi, M. & Yoshikawa, A., 1996 1月 1, In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 14, 3, p. 2371-2373 3 p.

  研究成果: Article › 査読

  • Molecular beam epitaxy 100%
  • Annealing 64%
  • Crystal structure 55%
  • molecular beam epitaxy 54%
  • wurtzite 51%
  2 被引用数 (Scopus)

• Photoluminescence study of ZnSe-ZnTe strained-layer superlattices grown on InP substrates

  Kobayashi, M., Mino, N., Katagiri, H., Kimura, R., Konagai, M. & Takahashi, K., 1986 12月 1, In: Journal of Applied Physics. 60, 2, p. 773-778 6 p.

  研究成果: Article › 査読

  • superlattices 100%
  • luminescence 80%
  • photoluminescence 73%
  • photoexcitation 57%
  • optoelectronic devices 52%
  49 被引用数 (Scopus)

• Planar-Doping of Molecular Beam Epitaxy Grown Znse With Plasma-Excited Nitrogen

  Matsumoto, S., Tosaka, H., Yoshida, T., Kobayashi, M. & Yoshikawa, A., 1993 2月, In: Japanese journal of applied physics. 32, 2 B, p. L229-L232

  研究成果: Article › 査読

  • Zinc Selenide 100%
  • Molecular beam epitaxy 86%
  • Hole concentration 70%
  • Doping (additives) 61%
  • Nitrogen 51%