抄録
λ/4-shifted InGaAsP/lnP DFB lasers were fabricated by a novel method, that is, simultaneous holographic exposure of positive and negative photoresists. The λ/4-phase-shift in the first-order corrugations formed on an InP substrate was confirmed through SEM views and diffracted beam patterns. A strong resonance peak below the threshold and singlewavelength operation above it at the Bragg wavelength were observed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 1008-1010 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 20 |
| 号 | 24 |
| DOI | |
| 出版ステータス | Published - 1984 11月 22 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学