10μW/cm2-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology

M. Tomita; S. Oba; Y. Himeda; R. Yamato; K. Shima; T. Kumada; M. Xu; H. Takezawa; K. Mesaki; K. Tsuda; S. Hashimoto; T. Zhan; H. Zhang; Y. Kamakura; Y. Suzuki; H. Inokawa; H. Ikeda; T. Matsukawa; T. Matsuki; T. Watanabe

doi:10.1109/VLSIT.2018.8510659

10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology

M. Tomita, S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

A best benchmark of Si-nanowire (NW) thermoelectric (TE) power generator has been achieved by our proposed planar device architecture compatible with CMOS process technology. The TE power density corresponds to 12 μW/cm², which is recorded at an externally applied temperature difference of only 5 K. The demonstration opens up a pathway to cost effective autonomous internet of things (IoT) application utilizing environmental and body heats.

本文言語	English
ホスト出版物のタイトル	2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	93-94
ページ数	2
ISBN（電子版）	9781538642160
DOI	https://doi.org/10.1109/VLSIT.2018.8510659
出版ステータス	Published - 2018 10月 25
イベント	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018 - Honolulu, United States 継続期間: 2018 6月 18 → 2018 6月 22

出版物シリーズ

名前	Digest of Technical Papers - Symposium on VLSI Technology
巻	2018-June
ISSN（印刷版）	0743-1562

Other

Other	38th IEEE Symposium on VLSI Technology, VLSI Technology 2018
国/地域	United States
City	Honolulu
Period	18/6/18 → 18/6/22

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/VLSIT.2018.8510659

他のファイルとリンク

引用スタイル

Tomita, M., Oba, S., Himeda, Y., Yamato, R., Shima, K., Kumada, T., Xu, M., Takezawa, H., Mesaki, K., Tsuda, K., Hashimoto, S., Zhan, T., Zhang, H., Kamakura, Y., Suzuki, Y., Inokawa, H., Ikeda, H., Matsukawa, T., Matsuki, T., & Watanabe, T. (2018). 10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018 (pp. 93-94). 記事 8510659 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/VLSIT.2018.8510659

10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology. / Tomita, M.; Oba, S.; Himeda, Y. その他.
2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 93-94 8510659 (Digest of Technical Papers - Symposium on VLSI Technology; Vol. 2018-June).

研究成果: Conference contribution

Tomita, M, Oba, S, Himeda, Y, Yamato, R, Shima, K, Kumada, T, Xu, M, Takezawa, H, Mesaki, K, Tsuda, K, Hashimoto, S, Zhan, T, Zhang, H, Kamakura, Y, Suzuki, Y, Inokawa, H, Ikeda, H, Matsukawa, T, Matsuki, T & Watanabe, T 2018, 10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology. in 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018., 8510659, Digest of Technical Papers - Symposium on VLSI Technology, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., pp. 93-94, 38th IEEE Symposium on VLSI Technology, VLSI Technology 2018, Honolulu, United States, 18/6/18. https://doi.org/10.1109/VLSIT.2018.8510659

Tomita M, Oba S, Himeda Y, Yamato R, Shima K, Kumada T その他. 10μW/cm²-class high power density planar Si-nanowire thermoelectric energy harvester compatible with CMOS-VLSI technology. In 2018 IEEE Symposium on VLSI Technology, VLSI Technology 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 93-94. 8510659. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.1109/VLSIT.2018.8510659

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