10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Tomonari Sato; Koji Takeda; Hiromitsu Imai; Akihiko Shinya; Kengo Nozaki; Hideaki Taniyama; Koichi Hasebe; Wataru Kobayashi; Takaaki Kakitsuka; Masaya Notomi; Shinji Matsuo

doi:10.1109/ICIPRM.2012.6403342

10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

Tomonari Sato^*, Koji Takeda, Hiromitsu Imai, Akihiko Shinya, Kengo Nozaki, Hideaki Taniyama, Koichi Hasebe, Wataru Kobayashi, Takaaki Kakitsuka, Masaya Notomi, Shinji Matsuo

^*この研究の対応する著者

研究成果: Conference contribution

抄録

We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

本文言語	English
ホスト出版物のタイトル	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
ページ	143-146
ページ数	4
DOI	https://doi.org/10.1109/ICIPRM.2012.6403342
出版ステータス	Published - 2012 12月 1
外部発表	はい
イベント	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 - Santa Barbara, CA, United States 継続期間: 2012 8月 27 → 2012 8月 30

出版物シリーズ

名前	Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN（印刷版）	1092-8669

Conference

Conference	2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012
国/地域	United States
City	Santa Barbara, CA
Period	12/8/27 → 12/8/30

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学

文献へのアクセス

10.1109/ICIPRM.2012.6403342

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引用スタイル

Sato, T., Takeda, K., Imai, H., Shinya, A., Nozaki, K., Taniyama, H., Hasebe, K., Kobayashi, W., Kakitsuka, T., Notomi, M., & Matsuo, S. (2012). 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 (pp. 143-146). [6403342] (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). https://doi.org/10.1109/ICIPRM.2012.6403342

10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. / Sato, Tomonari; Takeda, Koji; Imai, Hiromitsu その他.
2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 143-146 6403342 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

研究成果: Conference contribution

Sato, T, Takeda, K, Imai, H, Shinya, A, Nozaki, K, Taniyama, H, Hasebe, K, Kobayashi, W, Kakitsuka, T, Notomi, M & Matsuo, S 2012, 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. in 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012., 6403342, Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp. 143-146, 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012, Santa Barbara, CA, United States, 12/8/27. https://doi.org/10.1109/ICIPRM.2012.6403342

Sato T, Takeda K, Imai H, Shinya A, Nozaki K, Taniyama H その他. 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. In 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. p. 143-146. 6403342. (Conference Proceedings - International Conference on Indium Phosphide and Related Materials). doi: 10.1109/ICIPRM.2012.6403342

Sato, Tomonari ; Takeda, Koji ; Imai, Hiromitsu その他. / 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C. 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012. 2012. pp. 143-146 (Conference Proceedings - International Conference on Indium Phosphide and Related Materials).

@inproceedings{07be3b4da41a486b999a06d88601b9b3,

title = "10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C",

abstract = "We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.",

keywords = "Photonic crystals, Photonic integrated circuits, Semiconductor lasers",

author = "Tomonari Sato and Koji Takeda and Hiromitsu Imai and Akihiko Shinya and Kengo Nozaki and Hideaki Taniyama and Koichi Hasebe and Wataru Kobayashi and Takaaki Kakitsuka and Masaya Notomi and Shinji Matsuo",

year = "2012",

month = dec,

day = "1",

doi = "10.1109/ICIPRM.2012.6403342",

language = "English",

isbn = "9781467317252",

series = "Conference Proceedings - International Conference on Indium Phosphide and Related Materials",

pages = "143--146",

booktitle = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012",

note = "2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012 ; Conference date: 27-08-2012 Through 30-08-2012",

}

TY - GEN

T1 - 10-Gbit/s direct modulation of optically pumped InGaAlAs multiple-quantum-well photonic-crystal nanocavity laser up to 100°C

AU - Sato, Tomonari

AU - Takeda, Koji

AU - Imai, Hiromitsu

AU - Shinya, Akihiko

AU - Nozaki, Kengo

AU - Taniyama, Hideaki

AU - Hasebe, Koichi

AU - Kobayashi, Wataru

AU - Kakitsuka, Takaaki

AU - Notomi, Masaya

AU - Matsuo, Shinji

PY - 2012/12/1

Y1 - 2012/12/1

N2 - We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

AB - We demonstrate the 10-Gbit/s direct modulation of optically pumped photonic-crystal (PhC) nanocavity lasers at up to 100°C by using an InGaAlAs multiple-quantum-well (MQW) structure as an active region. The device exhibits an output power exceeding 20 μW and a maximum 3-dB bandwidth of 8.3 GHz at an operating temperature of 100°C. In addition, when the laser is modulated at 10 Gbit/s, low energy costs of 7.2 fJ/bit at 25°C and 23.4 fJ/bit at 100°C are successfully achieved. Thus an InGaAlAs MQW PhC nanocavity laser is a promising candidate for the light source of a photonic network on a CMOS chip.

KW - Photonic crystals

KW - Photonic integrated circuits

KW - Semiconductor lasers

UR - http://www.scopus.com/inward/record.url?scp=84873121929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84873121929&partnerID=8YFLogxK

U2 - 10.1109/ICIPRM.2012.6403342

DO - 10.1109/ICIPRM.2012.6403342

M3 - Conference contribution

AN - SCOPUS:84873121929

SN - 9781467317252

T3 - Conference Proceedings - International Conference on Indium Phosphide and Related Materials

SP - 143

EP - 146

BT - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012

T2 - 2012 International Conference on Indium Phosphide and Related Materials, IPRM 2012

Y2 - 27 August 2012 through 30 August 2012

ER -