抄録
Two-channel side-illuminated receiver OEIC arrays comprising waveguide p-i-n photodiodes and InAlAs-InGaAs-HEMT transimpedance amplifiers were fabricated with good uniformity on a 2-in wafer. The performances of the two channels were measured by on-wafer probe measurements and showed well-matched 3-dB bandwidth of 8.0 GHz, transimpedance of 155 Ω, and crosstalk less than -20 dB. The OEIC array operates at 10 Gbit/s with sensitivities of -16.1 dBm and -15.3 dBm for each channel for a bit error rate of 10-9 at a wavelength of 1.55 μm. This is the highest bit rate yet reported for a long-wavelength monolithic photoreceiver array.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 563-565 |
| ページ数 | 3 |
| ジャーナル | IEEE Photonics Technology Letters |
| 巻 | 8 |
| 号 | 4 |
| DOI | |
| 出版ステータス | Published - 1996 4月 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 電子工学および電気工学