10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl2 reactive ion beam etching using SiO2 sidewall masks

H. Arimoto; H. Kitada; Y. Sugiyama; A. Tackeuchi; A. Endo; S. Muto

doi:10.1016/0167-9317(93)90078-J

10-nm-wire fabrication in GaAs/AlGaAs MQWs by Cl₂ reactive ion beam etching using SiO₂ sidewall masks

H. Arimoto^*, H. Kitada, Y. Sugiyama, A. Tackeuchi, A. Endo, S. Muto

^*この研究の対応する著者

研究成果: Article › 査読

抄録

Fabrication with a 20 nm size was demonstrated in a GaAs/AlGaAs multiquantum well (MQW) structure by reactive ion beam etching (RIBE) using SiO₂ sidewall masks. The sidewall width can be precisely controlled by deposition time of SiO₂. Size fluctuations are accordingly reduced. This paper also describes the results of photoluminescence measurements at 77 K, including a clear blue shift in the PL spectra for 20 nm MQW wires.

本文言語	English
ページ（範囲）	303-306
ページ数	4
ジャーナル	Microelectronic Engineering
巻	21
号	1-4
DOI	https://doi.org/10.1016/0167-9317(93)90078-J
出版ステータス	Published - 1993 4月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
凝縮系物理学
表面、皮膜および薄膜
電子工学および電気工学

文献へのアクセス

10.1016/0167-9317(93)90078-J

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引用スタイル

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AU - Endo, A.

AU - Muto, S.

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