-10 v Threshold Voltage High-Performance Normally-OFF C-Si Diamond MOSFET Formed by p⁺-Diamond-First and Silicon Molecular Beam Deposition Approaches

Engineering & Materials Science

• Molecular beams 100%
• MOSFET devices 65%
• Threshold voltage 61%
• Diamonds 55%
• Silicon 44%
• Interface states 12%
• X-Ray Emission Spectrometry 10%
• Drain current 10%
• Energy gap 9%
• Boron 9%
• Leakage currents 8%
• Energy dispersive spectroscopy 8%
• Transmission electron microscopy 8%
• Current density 7%
• Aluminum oxide 7%
• Masks 7%
• Scanning electron microscopy 6%
• Metals 5%
• Temperature 3%

Chemical Compounds

• Molecular Beam 67%
• Field Effect 55%
• Diamond 53%
• Voltage 40%
• Drain Current 17%
• Interface State 17%
• Leakage Current 14%
• Scanning Transmission Electron Microscopy 12%
• Energy Dispersive X-Ray Spectroscopy 10%
• Compound Mobility 8%
• Band Gap 8%
• Current Density 8%
• Metal 5%
• Application 3%