100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Takao Yamaguchi; Keiichi Yodoshi; Kimihide Minakuchi; Norio Tabuchi; Yasuyuki Bessho; Yasuaki Inoue; Koji Komeda; Kazushi Mori; Atsushi Tajiri; Koji Tominaga

100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

Takao Yamaguchi^*, Keiichi Yodoshi, Kimihide Minakuchi, Norio Tabuchi, Yasuyuki Bessho, Yasuaki Inoue, Koji Komeda, Kazushi Mori, Atsushi Tajiri, Koji Tominaga

^*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

本文言語	English
ホスト出版物のタイトル	Proceedings of SPIE - The International Society for Optical Engineering
Place of Publication	Bellingham, WA, United States
出版社	Publ by Int Soc for Optical Engineering
ページ	363-371
ページ数	9
巻	1418
ISBN（印刷版）	0819405086
出版ステータス	Published - 1991
外部発表	はい
イベント	Laser Diode Technology and Applications III - Los Angeles, CA, USA 継続期間: 1991 1月 23 → 1991 1月 25

Other

Other	Laser Diode Technology and Applications III
City	Los Angeles, CA, USA
Period	91/1/23 → 91/1/25

ASJC Scopus subject areas

電子工学および電気工学
凝縮系物理学

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引用スタイル

Yamaguchi, T, Yodoshi, K, Minakuchi, K, Tabuchi, N, Bessho, Y, Inoue, Y, Komeda, K, Mori, K, Tajiri, A & Tominaga, K 1991, 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 1418, Publ by Int Soc for Optical Engineering, Bellingham, WA, United States, pp. 363-371, Laser Diode Technology and Applications III, Los Angeles, CA, USA, 91/1/23.

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title = "100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays",

abstract = "Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.",

author = "Takao Yamaguchi and Keiichi Yodoshi and Kimihide Minakuchi and Norio Tabuchi and Yasuyuki Bessho and Yasuaki Inoue and Koji Komeda and Kazushi Mori and Atsushi Tajiri and Koji Tominaga",

year = "1991",

language = "English",

isbn = "0819405086",

volume = "1418",

pages = "363--371",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Publ by Int Soc for Optical Engineering",

note = "Laser Diode Technology and Applications III ; Conference date: 23-01-1991 Through 25-01-1991",

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T1 - 100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

AU - Yamaguchi, Takao

AU - Yodoshi, Keiichi

AU - Minakuchi, Kimihide

AU - Tabuchi, Norio

AU - Bessho, Yasuyuki

AU - Inoue, Yasuaki

AU - Komeda, Koji

AU - Mori, Kazushi

AU - Tajiri, Atsushi

AU - Tominaga, Koji

PY - 1991

Y1 - 1991

N2 - Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

AB - Four-beam individually addressable monolithic AlGaAs laser-diode arrays have been developed in which each laser element can emit over 100 mW of output power in single-mode operation. The structural features of this laser include current-blocking regions near the facets and a long cavity length to obtain higher power, as well as a cBN heatsink and a 70 μm-thick laser chip to improve thermal crosstalk between laser elements. The maximum output power of each laser element is about 200 mW and the lasing wavelength is about 834 nm. Thermal crosstalk between 100 μm-spaced neighboring elements is only 1.0% at 100 mW.

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M3 - Conference contribution

AN - SCOPUS:0026403856

SN - 0819405086

VL - 1418

SP - 363

EP - 371

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - Publ by Int Soc for Optical Engineering

CY - Bellingham, WA, United States

T2 - Laser Diode Technology and Applications III

Y2 - 23 January 1991 through 25 January 1991

ER -

100-mW four-beam individually addressable monolithic AlGaAs laser diode arrays

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ASJC Scopus subject areas

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