1.5 μm GaInAsP/InP Distributed Reflector (DR) Lasers with SCH Structure

Isao Arima; Jong In Shim; Shigehisa Arai; Itsuro Morita; R. Somchai; Yasuharu Suematsu; Kazuhiro Komori

doi:10.1109/68.56594

1.5 μm GaInAsP/InP Distributed Reflector (DR) Lasers with SCH Structure

Isao Arima, Jong In Shim, Shigehisa Arai, Itsuro Morita, R. Somchai, Yasuharu Suematsu, Kazuhiro Komori

研究成果: Article › 査読

抄録

Appreciably large differential quantum efficiency Ωdf with one-directional output operation was obtained in 1.5 μm distributed reflector (DR) lasers, using a thin active layer of 50 nm and the SCH structure. Ωdf of the DR lasers was experimentally confirmed to be two times that of DFB lasers cleaved from the same wafer, which indicated high efficiency and high power characteristics of DR lasers.

本文言語	English
ページ（範囲）	385-387
ページ数	3
ジャーナル	IEEE Photonics Technology Letters
巻	2
号	6
DOI	https://doi.org/10.1109/68.56594
出版ステータス	Published - 1990 6月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
原子分子物理学および光学
電子工学および電気工学

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AU - Arima, Isao

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AU - Somchai, R.

AU - Suematsu, Yasuharu

AU - Komori, Kazuhiro

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1.5 μm GaInAsP/InP Distributed Reflector (DR) Lasers with SCH Structure

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