TY - GEN
T1 - 2-GHz band ultra-low-voltage LC-VCO IC in 130nm CMOS technology
AU - Yang, Xin
AU - Xu, Kangyang
AU - Wang, Wei
AU - Uchida, Yorikatsu
AU - Yoshimasu, Toshihiko
PY - 2013/12/23
Y1 - 2013/12/23
N2 - An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.
AB - An ultra-low-voltage LC-VCO IC has been demonstrated using 130nm CMOS technology. The LC-VCO IC includes a cross-coupled nMOSFET pair, a spiral inductor, MOS varactors and a buffer amplifier. The LC-VCO IC is designed, fabricated and fully evaluated on wafer. The VCO IC exhibits a phase noise of -137 dBc/Hz at 1 MHz offset from the 2.2 GHz carrier at a supply voltage of only 0.5 V.
KW - LC-VCO
KW - Low Phase Noise
KW - Ultra-Low-Power
UR - http://www.scopus.com/inward/record.url?scp=84890482090&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890482090&partnerID=8YFLogxK
U2 - 10.1109/EDSSC.2013.6628052
DO - 10.1109/EDSSC.2013.6628052
M3 - Conference contribution
AN - SCOPUS:84890482090
SN - 9781467325233
T3 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
BT - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
T2 - 2013 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2013
Y2 - 3 June 2013 through 5 June 2013
ER -