@inproceedings{8a5b46724fe941a0b043bf42f8eba5fe,
title = "209mW 11Gbps 130GHz CMOS transceiver for indoor wireless communication",
abstract = "CMOS millimeter-wave transceivers have realized over 10Gbps communication for proximity communication within 10cm distance. To increase the communication distance for indoor applications, the output power of transmitters should be increased. However, it has been difficult to simultaneously realize high power efficiency together with low power consumption and the wideband required for 10Gbps communication in the power amplifiers used in transmitters. To realize 10Gbps communication for indoor applications with CMOS technology, the co-design of a modulator with low impedance variation and a wideband power amplifier is proposed by adopting amplitude-shift keying. The proposed transceiver is fabricated using a 40nm CMOS process, and is the first transceiver to realize 11Gbps with a communication distance of 3m and has a power consumption of 208.9mW. The transmitter realized maximum 2.8dBm output power with 77mW power consumption using a power amplifier with a 3dB bandwidth of 18GHz.",
keywords = "ASK, CMOS, D-band, Millimeter-wave",
author = "Kosuke Katayama and Mizuki Motoyoshi and Kyoya Takano and Yang, {Li Chen} and Minoru Fujishima",
year = "2013",
month = dec,
day = "1",
doi = "10.1109/ASSCC.2013.6691069",
language = "English",
isbn = "9781479902781",
series = "Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013",
pages = "409--412",
booktitle = "Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013",
note = "2013 9th IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 ; Conference date: 11-11-2013 Through 13-11-2013",
}