2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

Xiao Xu; Xin Yang; Toshihiko Yoshimasu

doi:10.1109/EDSSC.2015.7285037

2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

Xiao Xu, Xin Yang, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

抄録

An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

本文言語	English
ホスト出版物のタイトル	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	13-16
ページ数	4
ISBN（電子版）	9781479983636
DOI	https://doi.org/10.1109/EDSSC.2015.7285037
出版ステータス	Published - 2015 9月 30
イベント	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 - Singapore, Singapore 継続期間: 2015 6月 1 → 2015 6月 4

出版物シリーズ

名前	Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015

Other

Other	11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015
国/地域	Singapore
City	Singapore
Period	15/6/1 → 15/6/4

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/EDSSC.2015.7285037

他のファイルとリンク

引用スタイル

Xu, X., Yang, X., & Yoshimasu, T. (2015). 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 (pp. 13-16). 記事 7285037 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2015.7285037

2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. / Xu, Xiao; Yang, Xin; Yoshimasu, Toshihiko.
Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 13-16 7285037 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

研究成果: Conference contribution

Xu, X, Yang, X & Yoshimasu, T 2015, 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. in Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015., 7285037, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 13-16, 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, Singapore, Singapore, 15/6/1. https://doi.org/10.1109/EDSSC.2015.7285037

Xu X, Yang X, Yoshimasu T. 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. In Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 13-16. 7285037. (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015). doi: 10.1109/EDSSC.2015.7285037

Xu, Xiao ; Yang, Xin ; Yoshimasu, Toshihiko. / 2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS. Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 13-16 (Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015).

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title = "2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS",

abstract = "An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.",

keywords = "LC-VCO, Low Phase Noise, Ultra-Low-Voltage",

author = "Xiao Xu and Xin Yang and Toshihiko Yoshimasu",

note = "Funding Information: Acknowledgment: This work is supported by Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Scientific Research (B) Number 23360162. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo with the collaboration with Cadence Corporation, Mentor Graphics Corporation and Keysight Technologies. Publisher Copyright: {\textcopyright} 2015 IEEE.; 11th IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015 ; Conference date: 01-06-2015 Through 04-06-2015",

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N1 - Funding Information: Acknowledgment: This work is supported by Japan Society for the Promotion of Science (JSPS) KAKENHI Grant-in-Aid for Scientific Research (B) Number 23360162. This work is supported by VLSI Design and Education Center (VDEC), University of Tokyo with the collaboration with Cadence Corporation, Mentor Graphics Corporation and Keysight Technologies. Publisher Copyright: © 2015 IEEE.

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N2 - An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

AB - An ultra-low-voltage low phase noise LC-VCO IC has been demonstrated using 180-nm CMOS technology. The LC-VCO IC includes a cross-coupled pMOSFET pair, a symmetric three-port spiral inductor, MOS varactors and buffer amplifiers. The LC-VCO IC is designed, fabricated and fully tested on wafer. The VCO IC exhibits a phase noise of -118.9 dBc/Hz at 1 MHz offset from the 2.29 GHz carrier at a supply voltage of only 0.5 V. Moreover, minimum operation voltage of only 0.25 V has been achieved.

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2.4-GHz band ultra-low-voltage LC-VCO IC in 180-nm CMOS

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