300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator

Yu Fu; Yuhao Chang; Xiaohua Zhu; Atsushi Hiraiwa; Ruimin Xu; Yuehang Xu; Hiroshi Kawarada

doi:10.1109/ISPSD49238.2022.9813655

300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator

Yu Fu, Yuhao Chang, Xiaohua Zhu, Atsushi Hiraiwa, Ruimin Xu, Yuehang Xu, Hiroshi Kawarada^*

^*この研究の対応する著者

基幹理工学部

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.

本文言語	English
ホスト出版物のタイトル	2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	121-124
ページ数	4
ISBN（電子版）	9781665422017
DOI	https://doi.org/10.1109/ISPSD49238.2022.9813655
出版ステータス	Published - 2022
イベント	34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 - Vancouver, Canada 継続期間: 2022 5月 22 → 2022 5月 25

出版物シリーズ

名前	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
巻	2022-May
ISSN（印刷版）	1063-6854

Conference

Conference	34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022
国/地域	Canada
City	Vancouver
Period	22/5/22 → 22/5/25

ASJC Scopus subject areas

工学一般

文献へのアクセス

10.1109/ISPSD49238.2022.9813655

他のファイルとリンク

フィンガープリント

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引用スタイル

Fu, Y., Chang, Y., Zhu, X., Hiraiwa, A., Xu, R., Xu, Y., & Kawarada, H. (2022). 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator. In 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (pp. 121-124). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2022-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD49238.2022.9813655

300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator. / Fu, Yu; Chang, Yuhao; Zhu, Xiaohua その他.
2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., 2022. p. 121-124 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2022-May).

研究成果: Conference contribution

Fu, Y, Chang, Y, Zhu, X, Hiraiwa, A, Xu, R, Xu, Y & Kawarada, H 2022, 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator. in 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2022-May, Institute of Electrical and Electronics Engineers Inc., pp. 121-124, 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022, Vancouver, Canada, 22/5/22. https://doi.org/10.1109/ISPSD49238.2022.9813655

Fu Y, Chang Y, Zhu X, Hiraiwa A, Xu R, Xu Y その他. 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator. In 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc. 2022. p. 121-124. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD49238.2022.9813655

Fu, Yu ; Chang, Yuhao ; Zhu, Xiaohua その他. / 300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al₂O₃Gate Insulator. 2022 34th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022. Institute of Electrical and Electronics Engineers Inc., 2022. pp. 121-124 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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title = "300 mA/mm Drain Current Density P-Type Enhancement-Mode Oxidized Si-terminated (111) Diamond MOSFETs with ALD Al2O3Gate Insulator",

abstract = "In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.",

keywords = "Diamond, MOSFETs, Normally-off, Silicon",

author = "Yu Fu and Yuhao Chang and Xiaohua Zhu and Atsushi Hiraiwa and Ruimin Xu and Yuehang Xu and Hiroshi Kawarada",

note = "Funding Information: ACKNOWLEDGMENT This work is supported in part by the scholarship from China Scholarship Council under Grant 201906070040 and in part by the National Natural Science Foundation of China under Grant 61922021. Publisher Copyright: {\textcopyright} 2022 IEEE.; 34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 ; Conference date: 22-05-2022 Through 25-05-2022",

year = "2022",

doi = "10.1109/ISPSD49238.2022.9813655",

language = "English",

series = "Proceedings of the International Symposium on Power Semiconductor Devices and ICs",

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AU - Fu, Yu

AU - Chang, Yuhao

AU - Zhu, Xiaohua

AU - Hiraiwa, Atsushi

AU - Xu, Ruimin

AU - Xu, Yuehang

AU - Kawarada, Hiroshi

N1 - Funding Information: ACKNOWLEDGMENT This work is supported in part by the scholarship from China Scholarship Council under Grant 201906070040 and in part by the National Natural Science Foundation of China under Grant 61922021. Publisher Copyright: © 2022 IEEE.

PY - 2022

Y1 - 2022

N2 - In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.

AB - In this study, high-performance normally-off oxidized Si-terminated (C-Si) diamond metal-oxide- semiconductor field-effect transistors (MOSFETs) have been achieved using (111) diamond and Al2O3 gate insulator with maximum drain current density (ID_MAX) up to 300 mA/mm, which is a record value among Enhancement-mode single crystalline diamond devices to date. During selective growth of heavily-boron-doped (p++)-diamond MOSFETs utilizing a SiO2 mask, carbon-silicon bonding was established at SiO2/diamond interface. C-Si diamond MOSFET will be a promising candidate for fulfilling the requirements of high output capability and safety operation in some power device applications.

KW - Diamond

KW - MOSFETs

KW - Normally-off

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