36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate through In-Cell Hot-Carrier Injection Burn-In

Kunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Strong physically unclonable functions (Strong PUFs) are expected to meet the low-energy and low-latency authentication requirements of IoT applications, owing to their exponential number of challenge-response pairs (CRPs). However, Strong PUFs suffer from vulnerability to modeling attacks and a high bit-error rate (BER). The first Strong PUF, known as the arbiter PUF, has little tolerance against modeling attacks because of the linear summation of path-delay times in its response [1]. Several studies have been conducted to improve immunity by introducing non-linearity in the response-generation procedure [2] -[6]. Out of these, only look-up-table (LUT)-based solutions [2], [6] achieved a high machine-learning (ML) robustness against more than 0.1M training CRPs. However, the design in [2] requires 112K bits of entropy, and that in [6] uses many AES S-boxes, as well as entropy sources. The complex response procedures cause high native BER in Strong PUFs, although zero error is not essential because cryptography is not needed in the authentication procedure. CRP filtering [3], [5], [6], a popular countermeasure, not only reduces usable CRPs, but it also requires the server to perform additional tasks in both enrollment and authentication. Taking advantage of a LUT, one can apply SRAM-PUF stabilization techniques. Hot-carrier-injection (HCI) burn-in [7] does not reduce the number of usable bitcells. However, conventionally, it requires the inverse data to be written back before HCI burn-in. Although this could be done on-chip, it provides a potential attack point to an adversary.

本文言語English
ホスト出版物のタイトル2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - Digest of Technical Papers
出版社Institute of Electrical and Electronics Engineers Inc.
ページ502-504
ページ数3
ISBN(電子版)9781728195490
DOI
出版ステータスPublished - 2021 2月 13
イベント2021 IEEE International Solid-State Circuits Conference, ISSCC 2021 - San Francisco, United States
継続期間: 2021 2月 132021 2月 22

出版物シリーズ

名前Digest of Technical Papers - IEEE International Solid-State Circuits Conference
64
ISSN(印刷版)0193-6530

Conference

Conference2021 IEEE International Solid-State Circuits Conference, ISSCC 2021
国/地域United States
CitySan Francisco
Period21/2/1321/2/22

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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