4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires

Katsuki Abe; Kaito Oda; Motohiro Tomita; Takeo Matsuki; Takashi Matsukawa; Takanobu Watanabe

doi:10.23919/SISPAD49475.2020.9241598

4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires

Katsuki Abe, Kaito Oda, Motohiro Tomita, Takeo Matsuki, Takashi Matsukawa, Takanobu Watanabe

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon-nanowire (Si-NW). The planar TE generators are driven by the temperature gradient along the Si-NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si-NW length and metal wiring structure are also discussed.

本文言語	English
ホスト出版物のタイトル	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	75-78
ページ数	4
ISBN（電子版）	9784863487635
DOI	https://doi.org/10.23919/SISPAD49475.2020.9241598
出版ステータス	Published - 2020 9月 23
イベント	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 - Virtual, Kobe, Japan 継続期間: 2020 9月 3 → 2020 10月 6

出版物シリーズ

名前	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
巻	2020-September

Conference

Conference	2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
国/地域	Japan
City	Virtual, Kobe
Period	20/9/3 → 20/10/6

ASJC Scopus subject areas

電子工学および電気工学
コンピュータサイエンスの応用
モデリングとシミュレーション

文献へのアクセス

10.23919/SISPAD49475.2020.9241598

他のファイルとリンク

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引用スタイル

Abe, K., Oda, K., Tomita, M., Matsuki, T., Matsukawa, T., & Watanabe, T. (2020). 4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (pp. 75-78). 記事 9241598 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/SISPAD49475.2020.9241598

4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires. / Abe, Katsuki; Oda, Kaito; Tomita, Motohiro その他.
2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 75-78 9241598 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD; Vol. 2020-September).

研究成果: Conference contribution

Abe, K, Oda, K, Tomita, M, Matsuki, T, Matsukawa, T & Watanabe, T 2020, 4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires. in 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020., 9241598, International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, vol. 2020-September, Institute of Electrical and Electronics Engineers Inc., pp. 75-78, 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020, Virtual, Kobe, Japan, 20/9/3. https://doi.org/10.23919/SISPAD49475.2020.9241598

Abe K, Oda K, Tomita M, Matsuki T, Matsukawa T, Watanabe T. 4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires. In 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 75-78. 9241598. (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD). doi: 10.23919/SISPAD49475.2020.9241598

Abe, Katsuki ; Oda, Kaito ; Tomita, Motohiro その他. / 4-4 effect of unit-cell arrangement on performance of multi-stage-planar cavity-free unileg thermoelectric generator using silicon nanowires. 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 75-78 (International Conference on Simulation of Semiconductor Processes and Devices, SISPAD).

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abstract = "We compare the thermoelectric (TE) performances between two types of unit cell arrangements of planar unileg TE generators of silicon-nanowire (Si-NW). The planar TE generators are driven by the temperature gradient along the Si-NW. The TE performance highly depends on how the hot and cold sides of the unit cell is oriented with respect to the neighboring cells. If the hot sides of neighboring cells are placed next to each other, TE power is improved compared to the case where the hot and cold side of TE generator is arranged alternately. Optimal conditions of Si-NW length and metal wiring structure are also discussed.",

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