40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo; Takuro Fujii; Koichi Hasebe; Koji Takeda; Tomonari Sato; Takaaki Kakitsuka

doi:10.1109/ISLC.2014.148

40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

Shinji Matsuo, Takuro Fujii, Koichi Hasebe, Koji Takeda, Tomonari Sato, Takaaki Kakitsuka

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

We fabricate a lateral current injection DFB laser on SiO2/Si substrate by combining direct bonding and epitaxial regrowth techniques. The device is directly modulated by 40-Gbit/s NRZ signal with a bias current of 15 mA.

本文言語	English
ホスト出版物のタイトル	Conference Digest - IEEE International Semiconductor Laser Conference
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	30-31
ページ数	2
ISBN（電子版）	9781479957217
DOI	https://doi.org/10.1109/ISLC.2014.148
出版ステータス	Published - 2014 12月 16
外部発表	はい
イベント	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014 - Palma de Mallorca, Spain 継続期間: 2014 9月 7 → 2014 9月 10

出版物シリーズ

名前	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN（印刷版）	0899-9406

Other

Other	2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014
国/地域	Spain
City	Palma de Mallorca
Period	14/9/7 → 14/9/10

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

文献へのアクセス

10.1109/ISLC.2014.148

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引用スタイル

Matsuo, S., Fujii, T., Hasebe, K., Takeda, K., Sato, T., & Kakitsuka, T. (2014). 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference (pp. 30-31). Article 6987435 (Conference Digest - IEEE International Semiconductor Laser Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLC.2014.148

40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. / Matsuo, Shinji; Fujii, Takuro; Hasebe, Koichi その他.
Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 30-31 6987435 (Conference Digest - IEEE International Semiconductor Laser Conference).

研究成果: Conference contribution

Matsuo, S, Fujii, T, Hasebe, K, Takeda, K, Sato, T & Kakitsuka, T 2014, 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. in Conference Digest - IEEE International Semiconductor Laser Conference., 6987435, Conference Digest - IEEE International Semiconductor Laser Conference, Institute of Electrical and Electronics Engineers Inc., pp. 30-31, 2014 24th IEEE International Semiconductor Laser Conference, ISLC 2014, Palma de Mallorca, Spain, 14/9/7. https://doi.org/10.1109/ISLC.2014.148

Matsuo S, Fujii T, Hasebe K, Takeda K, Sato T, Kakitsuka T. 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. In Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 30-31. 6987435. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2014.148

Matsuo, Shinji ; Fujii, Takuro ; Hasebe, Koichi その他. / 40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate. Conference Digest - IEEE International Semiconductor Laser Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 30-31 (Conference Digest - IEEE International Semiconductor Laser Conference).

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40-Gbit/s direct modulation of membrane buried heterostructure DFB laser on SiO2/Si substrate

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出版物シリーズ

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