-400 mA mm-1Drain Current Density Normally-Off Polycrystalline Diamond MOSFETs

Xiaohua Zhu, Siwu Shao, Yu Hao Chang, Runming Zhang, Sylvia Yuk Yee Chung, Yu Fu, Te Bi, Yabo Huang, Kang An, Jinlong Liu, Chengming Li, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

This letter reports a high drain current density and normally-off operation metal-oxide-semiconductor field-effect transistors (MOSFETs) with a gate insulator of 100 nm-Al2O3. A heavily boron-doped layer as the source/drain region was deposited on a (110) polycrystalline diamond substrate to achieve a low ohmic contact resistance. The MOSFETs demonstrate a maximum current density of -400 mA mm $^{-{1}}$ normalized by gate width and a maximum current density of $- 2000\,\,\mu \text{m}$ mA mm-1 normalized by gate length and gate width, which are the highest values for normally-off diamond FETs. The Grain boundaries (GBs) and the nitrogen impurities ( $\sim {3}\,\,\times \,\,{10}^{{17}}$ cm $^{-{3}}$ ) as ionized donors in the channel region caused the threshold voltage ( ${V}_{\text {th}}$ ) to shift in the negative direction, exhibiting normally-off characteristics. This technique provides a promising method to achieve high-performance diamond devices, and help improve safety and save energy in switching systems.

本文言語English
ページ(範囲)789-792
ページ数4
ジャーナルIEEE Electron Device Letters
43
5
DOI
出版ステータスPublished - 2022 5月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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