46% Peak PAE 28 GHz High Linearity Stacked-FET Power Amplifier IC with a Novel Two-Step Adaptive Bias Circuit in 45-nm SOI CMOS

Physics & Astronomy

• power amplifiers 100%
• power efficiency 97%
• linearity 81%
• CMOS 75%
• field effect transistors 66%
• insulators 62%
• silicon 45%
• output 37%
• electric potential 22%
• electrical faults 20%

Engineering & Materials Science

• Field effect transistors 90%
• Power amplifiers 83%
• Silicon 66%
• Networks (circuits) 46%
• Electric breakdown 23%
• Electric potential 21%

Chemical Compounds

• Nonconductor 95%
• Voltage 61%
• Application 13%