5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang; Tsuyoshi Sugiura; Norihisa Otani; Tadamasa Murakami; Eiichiro Otobe; Toshihiko Yoshimasu

doi:10.1109/EuMC.2014.6986700

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

Xin Yang, Tsuyoshi Sugiura, Norihisa Otani, Tadamasa Murakami, Eiichiro Otobe, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.

本文言語	English
ホスト出版物のタイトル	European Microwave Week 2014
ホスト出版物のサブタイトル	Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	1372-1375
ページ数	4
ISBN（電子版）	9782874870354
DOI	https://doi.org/10.1109/EuMC.2014.6986700
出版ステータス	Published - 2014 12月 15
イベント	2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 - Rome, Italy 継続期間: 2014 10月 6 → 2014 10月 9

出版物シリーズ

名前	European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference

Other

Other	2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014
国/地域	Italy
City	Rome
Period	14/10/6 → 14/10/9

ASJC Scopus subject areas

電子工学および電気工学

文献へのアクセス

10.1109/EuMC.2014.6986700

他のファイルとリンク

引用スタイル

Yang, X., Sugiura, T., Otani, N., Murakami, T., Otobe, E., & Yoshimasu, T. (2014). 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference (pp. 1372-1375). [6986700] (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2014.6986700

5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. / Yang, Xin; Sugiura, Tsuyoshi; Otani, Norihisa その他.
European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc., 2014. p. 1372-1375 6986700 (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference).

研究成果: Conference contribution

Yang, X, Sugiura, T, Otani, N, Murakami, T, Otobe, E & Yoshimasu, T 2014, 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. in European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference., 6986700, European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference, Institute of Electrical and Electronics Engineers Inc., pp. 1372-1375, 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 14/10/6. https://doi.org/10.1109/EuMC.2014.6986700

Yang X, Sugiura T, Otani N, Murakami T, Otobe E, Yoshimasu T. 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. In European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc. 2014. p. 1372-1375. 6986700. (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference). doi: 10.1109/EuMC.2014.6986700

Yang, Xin ; Sugiura, Tsuyoshi ; Otani, Norihisa その他. / 5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications. European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 1372-1375 (European Microwave Week 2014: Connecting the Future, EuMW 2014 - Conference Proceedings; EuMC 2014: 44th European Microwave Conference).

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title = "5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications",

abstract = "This paper presents a highly linear 5-GHz band power amplifier IC with integrated novel CMOS active bias circuit in SiGe BiCMOS technology for wireless LAN applications. The power amplifier IC consists of three-stage amplifier, the CMOS active bias circuit for linearizing SiGe HBT and all matching circuits. The power amplifier IC has exhibited a measured output power of 17.0 dBm, an EVM of 0.9 % and a dc current consumption of 284 mA under 54 Mbps OFDM signal at 5.4 GHz.",

keywords = "CMOS active bias circuit, Linear power amplifier, SiGe BiCMOS, WLAN",

author = "Xin Yang and Tsuyoshi Sugiura and Norihisa Otani and Tadamasa Murakami and Eiichiro Otobe and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2014 European Microwave Association.; 2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014 ; Conference date: 06-10-2014 Through 09-10-2014",

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AU - Otobe, Eiichiro

AU - Yoshimasu, Toshihiko

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5-GHz band SiGe HBT linear power amplifier IC with novel CMOS active bias circuit for WLAN applications

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