TY - GEN
T1 - 50-Gbit/s operation of lateral pin diode structure electro-absorption modulator integrated DFB laser
AU - Hasebe, Koichi
AU - Sato, Tomonari
AU - Takeda, Koji
AU - Fujii, Takuro
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
PY - 2014/11/20
Y1 - 2014/11/20
N2 - We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ signal with clear-eye opening.
AB - We developed an electro-absorption modulator integrated DFB laser using a lateral pin diode structure. Selective doping by thermal diffusion and ion implantation is essential for fabricating a monolithic integrated device. The device was modulated by 50-Gbit/s-NRZ signal with clear-eye opening.
UR - http://www.scopus.com/inward/record.url?scp=84915818688&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84915818688&partnerID=8YFLogxK
U2 - 10.1109/ECOC.2014.6964194
DO - 10.1109/ECOC.2014.6964194
M3 - Conference contribution
AN - SCOPUS:84915818688
T3 - European Conference on Optical Communication, ECOC
BT - European Conference on Optical Communication, ECOC
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 European Conference on Optical Communication, ECOC 2014
Y2 - 21 September 2014 through 25 September 2014
ER -