TY - GEN
T1 - 50-GHz-bandwidth Electro-absorption Modulator with Membrane InGaAsP Lateral p-i-n Diode on Si Platform
AU - Hiraki, Tatsurou
AU - Aihara, Takuma
AU - Maeda, Yoshiho
AU - Fujii, Takuro
AU - Tsuchizawa, Tai
AU - Takahata, Kiyoto
AU - Kakitsuka, Takaaki
AU - Matsuo, Shinji
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/12
Y1 - 2020/12
N2 - A 300-μm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.
AB - A 300-μm-long membrane InGaAsP electro-absorption modulator (EAM) integrated on Si-waveguide circuits exhibits a 3-dB bandwidth of 50 GHz. The EAM shows high linearity, low loss (< 4 dB), and eye openings for 112-Gbit/s PAM4 signals at wavelengths from 1570 to 1600 nm.
UR - http://www.scopus.com/inward/record.url?scp=85101168601&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85101168601&partnerID=8YFLogxK
U2 - 10.1109/ECOC48923.2020.9333206
DO - 10.1109/ECOC48923.2020.9333206
M3 - Conference contribution
AN - SCOPUS:85101168601
T3 - 2020 European Conference on Optical Communications, ECOC 2020
BT - 2020 European Conference on Optical Communications, ECOC 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 46th European Conference on Optical Communications, ECOC 2020
Y2 - 6 December 2020 through 10 December 2020
ER -