TY - GEN
T1 - 5.25 GHz linear CMOS power amplifier with a diode-connected NMOS bias circuit
AU - He, Shihai
AU - Uchida, Yorikatsu
AU - Yang, Xin
AU - Liu, Qing
AU - Yoshimasu, Toshihiko
PY - 2012
Y1 - 2012
N2 - In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.
AB - In this paper, a 5.25GHz linear CMOS power amplifier (PA) with an integrated diode is presented. The proposed technique improves the linearity of the power amplifier by a diode-connected NMOS transistor. The NMOS diode is effective to suppress both the AM-AM distortion and AM-PM distortion. To verify this concept, the power amplifier is simulated with TSMC 0.13-μm CMOS process. With a power supply of 3.3 V, the proposed power amplifier exhibits a maximum IMD improvement of 25 dB with a PAE of 38.2 % at an output P1dB of 19.6 dBm.
KW - CMOS power amplifier
KW - Integrated Diode
KW - adaptive bias
KW - intermodulation distortion
UR - http://www.scopus.com/inward/record.url?scp=84864614146&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864614146&partnerID=8YFLogxK
U2 - 10.1109/ICMMT.2012.6230444
DO - 10.1109/ICMMT.2012.6230444
M3 - Conference contribution
AN - SCOPUS:84864614146
SN - 9781467321839
T3 - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
SP - 1912
EP - 1915
BT - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012 - Proceedings
T2 - 2012 International Conference on Microwave and Millimeter Wave Technology, ICMMT 2012
Y2 - 5 May 2012 through 8 May 2012
ER -