抄録
In this paper, a W-band (80 GHz) sub-harmonic mixer (SHM) IC is designed, fabricated and measured in 130-nm SiGe BiCMOS technology. The presented SHM IC makes use of a common emitter common collector transistor pair structure with a bottom-LO-configuration to decrease the LO power requirement and a tail current source to flatten the conversion gain. On-chip Marchand balun is designed for W-band on-wafer measurements. The SHM IC presented in this paper has exhibited a conversion gain of 3.9 dB at 80 GHz RF signal with an LO power of only -7 dBm at 39.5 GHz. The mixer core consumes only 0.68 mA at a supply voltage of 3.3 V.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 703-712 |
| ページ数 | 10 |
| ジャーナル | International Journal of Microwave and Wireless Technologies |
| 巻 | 8 |
| 号 | 4-5 |
| DOI | |
| 出版ステータス | Published - 2016 6月 1 |
ASJC Scopus subject areas
- 電子工学および電気工学