抄録
We demonstrate high baud-rate DQPSK modulation with full-ETDM technique using a novel high-speed optical IQ modulator consisting of a ridge-type optical waveguide structure on a thin LiNbO3 substrate. Our fabrication technique achieves a drastic extension of the modulator's bandwidth and a reduction of half-wave voltage. Demonstration of 90-Gbaud NRZ-DP-DQPSK signal generation with the modulator successfully achieved a bit rate of 360-Gb/s under full-ETDM configuration.
本文言語 | English |
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ページ(範囲) | 1179-1186 |
ページ数 | 8 |
ジャーナル | IEICE Transactions on Electronics |
巻 | E94-C |
号 | 7 |
DOI | |
出版ステータス | Published - 2011 7月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 電子工学および電気工学