90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

A. Matsumoto; T. Umezawa; K. Akahane; A. Kanno; N. Yamamoto; Tetsuya Kawanishi

90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

A. Matsumoto, T. Umezawa, K. Akahane, A. Kanno, N. Yamamoto, Tetsuya Kawanishi

研究成果: Conference contribution

抄録

We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

本文言語	English
ホスト出版物のタイトル	2016 International Semiconductor Laser Conference, ISLC 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9784885523069
出版ステータス	Published - 2016 12月 2
イベント	2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan 継続期間: 2016 9月 12 → 2016 9月 15

Other

Other	2016 International Semiconductor Laser Conference, ISLC 2016
国/地域	Japan
City	Kobe
Period	16/9/12 → 16/9/15

ASJC Scopus subject areas

原子分子物理学および光学
電子工学および電気工学

他のファイルとリンク

引用スタイル

Matsumoto, A, Umezawa, T, Akahane, K, Kanno, A, Yamamoto, N & Kawanishi, T 2016, 90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA. in 2016 International Semiconductor Laser Conference, ISLC 2016., 7765781, Institute of Electrical and Electronics Engineers Inc., 2016 International Semiconductor Laser Conference, ISLC 2016, Kobe, Japan, 16/9/12.

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title = "90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA",

abstract = "We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.",

keywords = "Photodiode, Photoreceiver, Quantum dot, Semiconductor optical amplifier",

author = "A. Matsumoto and T. Umezawa and K. Akahane and A. Kanno and N. Yamamoto and Tetsuya Kawanishi",

year = "2016",

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day = "2",

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booktitle = "2016 International Semiconductor Laser Conference, ISLC 2016",

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T1 - 90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

AU - Matsumoto, A.

AU - Umezawa, T.

AU - Akahane, K.

AU - Kanno, A.

AU - Yamamoto, N.

AU - Kawanishi, Tetsuya

PY - 2016/12/2

Y1 - 2016/12/2

N2 - We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

AB - We investigated fundamental characteristics of a hybrid integrated photoreceiver module with a 1.5 μm-band quantum dot semiconductor optical amplifier (QD-SOA) and conventional pin-photodiode (pin-PD) as a first stage. The results indicated the photoreceiver integrated with a QD-SOA and QD-PD has the potential to be operated for signals over 100 Gb/s.

KW - Photodiode

KW - Photoreceiver

KW - Quantum dot

KW - Semiconductor optical amplifier

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M3 - Conference contribution

AN - SCOPUS:85014265135

BT - 2016 International Semiconductor Laser Conference, ISLC 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 International Semiconductor Laser Conference, ISLC 2016

Y2 - 12 September 2016 through 15 September 2016

ER -

90 Gb/s hybrid integrated photoreceiver module with high speed 1.5 μm-band QD-SOA

抄録

Other

ASJC Scopus subject areas

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