A 1 Mb nonvolatile embedded memory using 4T2MTJ cell with 32 b fine-grained power gating scheme
Takashi Ohsawa, Hiroki Koike, Sadahiko Miura, Hiroaki Honjo, Keizo Kinoshita, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno, Tetsuo Endoh
研究成果: Article › 査読
67
被引用数
(Scopus)