抄録
In this paper, we propose two kinds of implementations of the dual port MRAM, one of which is for the read/write concurrent operation while another is for the additional simultaneous read operation. Compared with dual port SRAM, the dual port MRAM accompanied with smaller memory cell size will make high performance systems realized in the mobile/robotics field. A swing-less bit-line sensing (SLBS) technique and the static bitline level in the read mode, help to realize the high performance under the condition of Vcc=1.0V and the operation frequency of 100MHz.
本文言語 | English |
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ホスト出版物のタイトル | 2006 International Symposium on Communications and Information Technologies, ISCIT |
ページ | 63-66 |
ページ数 | 4 |
DOI | |
出版ステータス | Published - 2006 |
イベント | 2006 International Symposium on Communications and Information Technologies, ISCIT - Bangkok 継続期間: 2006 10月 18 → 2006 10月 20 |
Other
Other | 2006 International Symposium on Communications and Information Technologies, ISCIT |
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City | Bangkok |
Period | 06/10/18 → 06/10/20 |
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信
- ハードウェアとアーキテクチャ
- 電子工学および電気工学