抄録
A 12-MHz data-cycle 4-Mb DRAM with pipeline operation has been designed and fabricated using 0.8-μm twin-tub CMOS technology. The pipeline DRAM outputs data corresponding to addresses that were accepted in the previous [formula omitted] cycle. The latter half of the previous read operation and the first half of the next read operation take place simultaneously, so the [formula omitted] cycle time is reduced. This pipeline DRAM technology needs no additional chip area and no process modification. A 95-ns [formula omitted] cycle time was obtained under worst conditions while this value is 125 ns for conventional DRAM's.
本文言語 | English |
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ページ(範囲) | 479-483 |
ページ数 | 5 |
ジャーナル | IEEE Journal of Solid-State Circuits |
巻 | 26 |
号 | 4 |
DOI | |
出版ステータス | Published - 1991 4月 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学