A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

Cuilin Chen; Tsuyoshi Sugiura; Toshihiko Yoshimasu

doi:10.23919/EuMIC.2018.8539942

A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

Cuilin Chen, Tsuyoshi Sugiura, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.

本文言語	English
ホスト出版物のタイトル	EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	182-185
ページ数	4
ISBN（電子版）	9782874870521
DOI	https://doi.org/10.23919/EuMIC.2018.8539942
出版ステータス	Published - 2018 11月 16
イベント	13th European Microwave Integrated Circuits Conference, EuMIC 2018 - Madrid, Spain 継続期間: 2018 9月 24 → 2018 9月 25

出版物シリーズ

名前	EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference

Other

Other	13th European Microwave Integrated Circuits Conference, EuMIC 2018
国/地域	Spain
City	Madrid
Period	18/9/24 → 18/9/25

ASJC Scopus subject areas

コンピュータネットワークおよび通信
電子工学および電気工学
電子材料、光学材料、および磁性材料
器械工学

文献へのアクセス

10.23919/EuMIC.2018.8539942

他のファイルとリンク

引用スタイル

Chen, C., Sugiura, T., & Yoshimasu, T. (2018). A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. In EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference (pp. 182-185). [8539942] (EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EuMIC.2018.8539942

A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. / Chen, Cuilin; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2018. p. 182-185 8539942 (EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference).

研究成果: Conference contribution

Chen, C, Sugiura, T & Yoshimasu, T 2018, A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. in EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference., 8539942, EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference, Institute of Electrical and Electronics Engineers Inc., pp. 182-185, 13th European Microwave Integrated Circuits Conference, EuMIC 2018, Madrid, Spain, 18/9/24. https://doi.org/10.23919/EuMIC.2018.8539942

Chen C, Sugiura T, Yoshimasu T. A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. In EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc. 2018. p. 182-185. 8539942. (EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference). doi: 10.23919/EuMIC.2018.8539942

Chen, Cuilin ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS. EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 182-185 (EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference).

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title = "A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS",

abstract = "A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.",

keywords = "SOI CMOS, adaptive bias circuit, high efficiency, high linearity",

author = "Cuilin Chen and Tsuyoshi Sugiura and Toshihiko Yoshimasu",

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AB - A high efficiency linear power amplifier (PA) IC is presented for 14 GHz-band wireless communication systems. A novel adaptive bias circuit with four-stacked MOSFET structure is proposed to enhance both the linearity and efficiency of the PA IC over the wide input power range. The PA IC is designed, fabricated and fully tested in 56-nm SOI CMOS. In linear mode, the PA IC has exhibited an output P1dB of 20.1 dBm at 14 GHz and a supply voltage of 4.0 V. The measured PAE at P1dB is as high as 40.1%. Moreover, the peak PAE of 41.6% is achieved in efficient mode.

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A 14-GHz-Band Highly Linear Stacked FET Power Amplifier IC with 20.1 dBm P1dB and 40.1% PAE in 56-nm SOI CMOS

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出版物シリーズ

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