A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto; Kouichi Akahane; Toshimasa Umezawa; Tetsuya Kawanishi

doi:10.1587/transele.E98.C.878

A 1.55-μm waveband optical absorption characterization of an electro-absorption device with a highly stacked InAs/InGaAlAs quantum dot structure

Naokatsu Yamamoto, Kouichi Akahane, Toshimasa Umezawa, Tetsuya Kawanishi

研究成果: Article › 査読

抄録

A quantum dot (QD) electro-absorption device was successfully developed with a highly stacked InAs/InGaAlAs QD structure. A 1.55-μm waveband electro-absorption effect and a quantum confined Stark effect of approximately 22 meV under the application of a 214-kV/cm reverse bias electric field are clearly observed in the developed QD device.

本文言語	English
ページ（範囲）	878-881
ページ数	4
ジャーナル	IEICE Transactions on Electronics
巻	E98C
号	8
DOI	https://doi.org/10.1587/transele.E98.C.878
出版ステータス	Published - 2015 8月 1
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1587/transele.E98.C.878

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引用スタイル

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