抄録
A four phase switched polarity charge pump using 0.13μm triple well CMOS technology is presented. The architecture takes advantage of the threshold voltage cancellation scheme in the conventional four phase Dickson charge pump. With the body control technique, the body effect is eliminated. The charge transfer unit is shared in positive and negative operation, which makes the design more compact. Simulation results show that the proposed 5-stage charge pump can reach +8.22V/-8.05V (ideal: +9V/-9V) with 10% of total capacitance as estimated parastics, and the output indicates good linearity with respect to the increase of stages.
本文言語 | English |
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ホスト出版物のタイトル | 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 |
ページ | 688-692 |
ページ数 | 5 |
出版ステータス | Published - 2009 |
イベント | 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 - Milpitas, CA 継続期間: 2009 7月 23 → 2009 7月 25 |
Other
Other | 2009 International Conference on Communications, Circuits and Systems, ICCCAS 2009 |
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City | Milpitas, CA |
Period | 09/7/23 → 09/7/25 |
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信
- ハードウェアとアーキテクチャ
- 電子工学および電気工学