A 16M SRAM with improved characteristics using DRAM technology

Yuji Kihara; Yasushi Nakashima; Takashi Izutsu; Masayuki Nakamoto; Yasuhiro Konishi; Tsutomu Yoshihara

doi:10.1109/ASSCC.2005.251778

A 16M SRAM with improved characteristics using DRAM technology

Yuji Kihara^*, Yasushi Nakashima, Takashi Izutsu, Masayuki Nakamoto, Yasuhiro Konishi, Tsutomu Yoshihara

^*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

A 16Mbit Low Power SRAM with 0.98um² cells using 0.15um DRAM and TFT technology has been developed. A new type memory cell technology achieves enough low power, low cost and high soft error immunity without large investment. By these improved characteristics some customers at industrial machines and handy devices decided to use this new type of SRAM by compatibility with SRAM.

本文言語	English
ホスト出版物のタイトル	2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005
ページ	17-20
ページ数	4
DOI	https://doi.org/10.1109/ASSCC.2005.251778
出版ステータス	Published - 2006
イベント	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005 - Hsinchu 継続期間: 2005 11月 1 → 2005 11月 3

Other

Other	1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005
City	Hsinchu
Period	05/11/1 → 05/11/3

ASJC Scopus subject areas

電子工学および電気工学
電子材料、光学材料、および磁性材料

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10.1109/ASSCC.2005.251778

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引用スタイル

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title = "A 16M SRAM with improved characteristics using DRAM technology",

abstract = "A 16Mbit Low Power SRAM with 0.98um2 cells using 0.15um DRAM and TFT technology has been developed. A new type memory cell technology achieves enough low power, low cost and high soft error immunity without large investment. By these improved characteristics some customers at industrial machines and handy devices decided to use this new type of SRAM by compatibility with SRAM.",

author = "Yuji Kihara and Yasushi Nakashima and Takashi Izutsu and Masayuki Nakamoto and Yasuhiro Konishi and Tsutomu Yoshihara",

year = "2006",

doi = "10.1109/ASSCC.2005.251778",

language = "English",

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pages = "17--20",

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T1 - A 16M SRAM with improved characteristics using DRAM technology

AU - Kihara, Yuji

AU - Nakashima, Yasushi

AU - Izutsu, Takashi

AU - Nakamoto, Masayuki

AU - Konishi, Yasuhiro

AU - Yoshihara, Tsutomu

PY - 2006

Y1 - 2006

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AB - A 16Mbit Low Power SRAM with 0.98um2 cells using 0.15um DRAM and TFT technology has been developed. A new type memory cell technology achieves enough low power, low cost and high soft error immunity without large investment. By these improved characteristics some customers at industrial machines and handy devices decided to use this new type of SRAM by compatibility with SRAM.

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DO - 10.1109/ASSCC.2005.251778

M3 - Conference contribution

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BT - 2005 IEEE Asian Solid-State Circuits Conference, ASSCC 2005

T2 - 1st IEEE Asian Solid-State Circuits Conference, ASSCC 2005

Y2 - 1 November 2005 through 3 November 2005

ER -

A 16M SRAM with improved characteristics using DRAM technology

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