TY - GEN
T1 - A 20-30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS
AU - Chen, Cuilin
AU - Xu, Xiao
AU - Yang, Xin
AU - Sugiura, Tsuyoshi
AU - Yoshimasu, Toshihiko
N1 - Funding Information:
Acknowledgements. We wish to thank Dr. H. Cailla (Centre d’lm-munologie de Marseille-Luminy) for her help with the radioimmu-nological quantification of (2’-5’)(A),, oligonucleotides. We are deeply indebted to Prof. G.B. Rossi for fruitful discussions and to Dr. L. Hare1 for providing us with an FLC subline. Secretarial assistance has been provided by I. Olivier. This work has been supported by grants from the CNRS, ARC and Ligue Nationale de Lutte contre de Cancer to B. Lebleu, and from the Consiglio Nasionale delle Riceretie Progetto Bilaterale Italie-Francia (84-01712-04) to G.B. Rossi.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/3/8
Y1 - 2017/3/8
N2 - A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.
AB - A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.
KW - SiGe BiCMOS technology
KW - adaptive bias circuit
KW - broadband power amplifier
UR - http://www.scopus.com/inward/record.url?scp=85017291866&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85017291866&partnerID=8YFLogxK
U2 - 10.1109/SIRF.2017.7874379
DO - 10.1109/SIRF.2017.7874379
M3 - Conference contribution
AN - SCOPUS:85017291866
T3 - SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
SP - 88
EP - 90
BT - SiRF 2017 - 2017 IEEE 17th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 17th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 2017
Y2 - 15 January 2017 through 18 January 2017
ER -