A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu; Zheng Sun; Kangyang Xu; Xin Yang; Taufiq Kurniawan; Toshihiko Yoshimasu

doi:10.1109/RFIT.2014.6933241

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

Xiao Xu^*, Zheng Sun, Kangyang Xu, Xin Yang, Taufiq Kurniawan, Toshihiko Yoshimasu

^*この研究の対応する著者

大学院情報生産システム研究科

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

本文言語	English
ホスト出版物のタイトル	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology
ホスト出版物のサブタイトル	Silicon Technology Heats Up for THz
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781479955039
DOI	https://doi.org/10.1109/RFIT.2014.6933241
出版ステータス	Published - 2014 10月 21
イベント	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 - Hefei, China 継続期間: 2014 8月 27 → 2014 8月 30

出版物シリーズ

名前	RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

Conference

Conference	2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014
国/地域	China
City	Hefei
Period	14/8/27 → 14/8/30

ASJC Scopus subject areas

コンピュータネットワークおよび通信
電子工学および電気工学

文献へのアクセス

10.1109/RFIT.2014.6933241

他のファイルとリンク

引用スタイル

Xu, X., Sun, Z., Xu, K., Yang, X., Kurniawan, T., & Yoshimasu, T. (2014). A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz [6933241] (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2014.6933241

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. / Xu, Xiao; Sun, Zheng; Xu, Kangyang その他.
RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. 6933241 (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

研究成果: Conference contribution

Xu, X, Sun, Z, Xu, K, Yang, X, Kurniawan, T & Yoshimasu, T 2014, A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. in RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz., 6933241, RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014, Hefei, China, 14/8/27. https://doi.org/10.1109/RFIT.2014.6933241

Xu X, Sun Z, Xu K, Yang X, Kurniawan T, Yoshimasu T. A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. In RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc. 2014. 6933241. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz). doi: 10.1109/RFIT.2014.6933241

Xu, Xiao ; Sun, Zheng ; Xu, Kangyang その他. / A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS. RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz. Institute of Electrical and Electronics Engineers Inc., 2014. (RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz).

@inproceedings{0eb0ece327b64c1d9426680a3824f670,

title = "A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS",

abstract = "A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.",

keywords = "CMOS, Class-E, Low-voltage, Power amplifier, Short range communications",

author = "Xiao Xu and Zheng Sun and Kangyang Xu and Xin Yang and Taufiq Kurniawan and Toshihiko Yoshimasu",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014 ; Conference date: 27-08-2014 Through 30-08-2014",

year = "2014",

month = oct,

day = "21",

doi = "10.1109/RFIT.2014.6933241",

language = "English",

series = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology",

}

TY - GEN

T1 - A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

AU - Xu, Xiao

AU - Sun, Zheng

AU - Xu, Kangyang

AU - Yang, Xin

AU - Kurniawan, Taufiq

AU - Yoshimasu, Toshihiko

PY - 2014/10/21

Y1 - 2014/10/21

N2 - A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

AB - A fully integrated class-E power amplifier IC in 180-nm CMOS is presented for 2.5-GHz band short range wireless communication systems. To realize high efficiency with low operation voltage, a class-E amplifier with back gate effect has been designed, fabricated and fully evaluated. The proposed amplifier IC can operate at a supply voltage from 0.5 V to 1.5 V. The amplifier IC exhibits a P1dB of 6.9 dBm and a saturated output power of 10.7 dBm with a maximum drain efficiency of 36.4% at a 1.0 V power supply.

KW - CMOS

KW - Class-E

KW - Low-voltage

KW - Power amplifier

KW - Short range communications

UR - http://www.scopus.com/inward/record.url?scp=84912006734&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84912006734&partnerID=8YFLogxK

U2 - 10.1109/RFIT.2014.6933241

DO - 10.1109/RFIT.2014.6933241

M3 - Conference contribution

AN - SCOPUS:84912006734

T3 - RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology: Silicon Technology Heats Up for THz

BT - RFIT 2014 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2014 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2014

Y2 - 27 August 2014 through 30 August 2014

ER -

A 2.5-GHz band low-voltage class-E power amplifier IC for short-range wireless communications in 180-nm CMOS

抄録

出版物シリーズ

Conference

ASJC Scopus subject areas

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