TY - GEN
T1 - A 2.5-GHz band low-voltage high efficiency class-E power amplifier IC with body effect
AU - Kurniawan, Taufiq Alif
AU - Yang, Xin
AU - Xu, Xiao
AU - Sun, Zheng
AU - Yoshimasu, Toshihiko
N1 - Publisher Copyright:
© 2014 IEEE.
Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.
PY - 2015/2/2
Y1 - 2015/2/2
N2 - This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8 dBm with a drain efficiency of 35.0 % at a supply voltage of only 1-V.
AB - This paper presents a fully integrated class-E power amplifier IC with body effect to achieve high efficiency and high gain at low supply voltage for 2.5-GHz band short range wireless communication systems. The class-E amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS. The proposed power amplifier IC exhibits a small-signal gain of 10.8 dB and a saturated output power of 10.8 dBm with a drain efficiency of 35.0 % at a supply voltage of only 1-V.
KW - 180-nm CMOS
KW - 2.5-GHz band
KW - body effect
KW - class-E amplifier IC
UR - http://www.scopus.com/inward/record.url?scp=84924309002&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84924309002&partnerID=8YFLogxK
U2 - 10.1109/ISICIR.2014.7029483
DO - 10.1109/ISICIR.2014.7029483
M3 - Conference contribution
AN - SCOPUS:84924309002
T3 - Proceedings of the 14th International Symposium on Integrated Circuits, ISIC 2014
SP - 160
EP - 163
BT - Proceedings of the 14th International Symposium on Integrated Circuits, ISIC 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 14th International Symposium on Integrated Circuits, ISIC 2014
Y2 - 10 December 2014 through 12 December 2014
ER -