A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan; Xin Yang; Xiao Xu; Toshihiko Yoshimasu

doi:10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications

Taufiq Alif Kurniawan, Xin Yang, Xiao Xu, Toshihiko Yoshimasu

大学院情報生産システム研究科

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.

本文言語	English
ホスト出版物のタイトル	European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	219-222
ページ数	4
ISBN（印刷版）	9782874870392
DOI	https://doi.org/10.1109/EuMC.2015.7345739
出版ステータス	Published - 2015 12月 2
イベント	45th European Microwave Conference, EuMC 2015 - Paris, France 継続期間: 2015 9月 7 → 2015 9月 10

Other

Other	45th European Microwave Conference, EuMC 2015
国/地域	France
City	Paris
Period	15/9/7 → 15/9/10

ASJC Scopus subject areas

コンピュータネットワークおよび通信
電子工学および電気工学
放射線

文献へのアクセス

10.1109/EuMC.2015.7345739

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引用スタイル

Kurniawan, T. A., Yang, X., Xu, X., & Yoshimasu, T. (2015). A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC (pp. 219-222). [7345739] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EuMC.2015.7345739

A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. / Kurniawan, Taufiq Alif; Yang, Xin; Xu, Xiao その他.
European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. p. 219-222 7345739.

研究成果: Conference contribution

Kurniawan, TA, Yang, X, Xu, X & Yoshimasu, T 2015, A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. in European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC., 7345739, Institute of Electrical and Electronics Engineers Inc., pp. 219-222, 45th European Microwave Conference, EuMC 2015, Paris, France, 15/9/7. https://doi.org/10.1109/EuMC.2015.7345739

Kurniawan TA, Yang X, Xu X, Yoshimasu T. A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. In European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc. 2015. p. 219-222. 7345739 doi: 10.1109/EuMC.2015.7345739

Kurniawan, Taufiq Alif ; Yang, Xin ; Xu, Xiao その他. / A 2.5-GHz band low voltage high efficiency CMOS power amplifier IC using parallel switching transistor for short range wireless applications. European Microwave Week 2015: "Freedom Through Microwaves", EuMW 2015 - Conference Proceedings; 2015 45th European Microwave Conference Proceedings, EuMC. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 219-222

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abstract = "This paper presents a fully integrated low-voltage CMOS power amplifier (PA) IC for 2.5-GHz band short range wireless applications. The amplifier IC is designed, fabricated and fully evaluated in 180-nm CMOS technology. To realize high efficiency performance, the parallel switching transistor is proposed and combined with third harmonic tuning technique. In addition, for low voltage operations, the positive body bias is injected to the main switching transistor. The proposed CMOS PA IC has exhibited a P1dB of 8.0 dBm, a saturated output power of 10.1 dBm and a peak PAE of 34.5 % at a supply voltage of 1.0 V.",

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