A 26-GHz-band high back-off efficiency stacked-FET power amplifier IC with adaptively controlled bias and load circuits in 45-nm CMOS SOI
Toshihiko Yoshimasu*, Mengchu Fang, Tsuyoshi Sugiura
*この研究の対応する著者
研究成果: Article › 査読
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被引用数
(Scopus)