A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

Mengchu Fang; Tsuyoshi Sugiura; Toshihiko Yoshimasu

doi:10.1109/IWS49314.2020.9360109

A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI

Mengchu Fang, Tsuyoshi Sugiura, Toshihiko Yoshimasu

研究成果: Conference contribution

抄録

This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.

本文言語	English
ホスト出版物のタイトル	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781728167039
DOI	https://doi.org/10.1109/IWS49314.2020.9360109
出版ステータス	Published - 2020 9月 20
イベント	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Virtual, Shanghai, China 継続期間: 2020 9月 20 → 2020 9月 23

出版物シリーズ

名前	2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings

Conference

Conference	2020 IEEE MTT-S International Wireless Symposium, IWS 2020
国/地域	China
City	Virtual, Shanghai
Period	20/9/20 → 20/9/23

ASJC Scopus subject areas

コンピュータネットワークおよび通信
信号処理
器械工学

文献へのアクセス

10.1109/IWS49314.2020.9360109

他のファイルとリンク

フィンガープリント

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引用スタイル

Fang, M., Sugiura, T., & Yoshimasu, T. (2020). A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. In 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings Article 9360109 (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IWS49314.2020.9360109

A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. / Fang, Mengchu; Sugiura, Tsuyoshi; Yoshimasu, Toshihiko.
2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9360109 (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings).

研究成果: Conference contribution

Fang, M, Sugiura, T & Yoshimasu, T 2020, A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. in 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings., 9360109, 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE MTT-S International Wireless Symposium, IWS 2020, Virtual, Shanghai, China, 20/9/20. https://doi.org/10.1109/IWS49314.2020.9360109

Fang M, Sugiura T, Yoshimasu T. A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. In 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9360109. (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings). doi: 10.1109/IWS49314.2020.9360109

Fang, Mengchu ; Sugiura, Tsuyoshi ; Yoshimasu, Toshihiko. / A 28-GHz-Band Efficient Linear Power Amplifier with Novel Adaptive Bias Circuit for 5G Mobile Communications in 56-nm CMOS SOI. 2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. (2020 IEEE MTT-S International Wireless Symposium, IWS 2020 - Proceedings).

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abstract = "This paper presents a 28-GHz-band high efficiency linear power amplifier in 56-nm CMOS SOI for 5G mobile communication systems. A novel adaptive bias circuit is proposed to attain high linearity and efficiency simultaneously. In addition, a source degeneration inductor is utilized to improve the gain linearity of the power amplifier. It is expected that the power amplifier exhibits a P1dB of 20 dBm with a linear power gain of 13.2 dB and a peak PAE of 41.4% at a supply voltage of 3.6 V.",

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