抄録
A 30-GHz band power amplifier (PA) IC is designed, fabricated and fully tested in 120-nm SiGe HBT process. The impedances of the output matching network are optimized at both the fundamental and second harmonic for a high power added efficiency (PAE). At a supply voltage of 1.4 V, the PA IC has exhibited a measured output P1dB of 10.8 dBm, a peak PAE of 32.4%, and a small-signal gain of 9.1 dB at 30 GHz.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | RFIT 2016 - 2016 IEEE International Symposium on Radio-Frequency Integration Technology |
| 出版社 | Institute of Electrical and Electronics Engineers Inc. |
| ISBN（電子版） | 9781509012350 |
| DOI | |
| 出版ステータス | Published - 2016 9月 27 |
| イベント | 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 - Taipei, Taiwan, Province of China 継続期間: 2016 8月 24 → 2016 8月 26 |
Other
| Other | 2016 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2016 |
|---|---|
| 国/地域 | Taiwan, Province of China |
| City | Taipei |
| Period | 16/8/24 → 16/8/26 |
ASJC Scopus subject areas
- コンピュータ ネットワークおよび通信
- 電子工学および電気工学
- 器械工学